JPS5655070A - Semiconductor bidirectional switch - Google Patents

Semiconductor bidirectional switch

Info

Publication number
JPS5655070A
JPS5655070A JP13074779A JP13074779A JPS5655070A JP S5655070 A JPS5655070 A JP S5655070A JP 13074779 A JP13074779 A JP 13074779A JP 13074779 A JP13074779 A JP 13074779A JP S5655070 A JPS5655070 A JP S5655070A
Authority
JP
Japan
Prior art keywords
transistor
base
type
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13074779A
Other languages
Japanese (ja)
Other versions
JPS6148789B2 (en
Inventor
Haruo Mori
Kazuo Hagimura
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13074779A priority Critical patent/JPS5655070A/en
Publication of JPS5655070A publication Critical patent/JPS5655070A/en
Publication of JPS6148789B2 publication Critical patent/JPS6148789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a preferably dv/dt characteristics in a semiconductor bidirectional switch by employing an improved circuit for special critical off voltage rise ratio characteristics integrated by a P-N junction isolating process. CONSTITUTION:PNPN type elements 5, 6, emitter vs. collector symmetrical PNP transistor 9, NPN type transistors 10, 11, diodes 12, 13 are formed on an N type semiconductor substrate 19. Then, bypass gate and cathode resistors 7 and 8 are formed in a P type gate regions of the elements 5, 6. When positive and negative polarity dv/dt displacement voltages are applied to terminals 1 and 2 respectively, a displacement current will flow two paths of the anode and substrates 19 of the PNPN element 5 through a capacity between the emitter and the base as well as between the base and the collector of the diode 13 and the transistor 9 to the base 17 of the transistor 10, and the dv/dt displacement current is flowed through the transistor 10 by improving the dv/dt characteristics.
JP13074779A 1979-10-12 1979-10-12 Semiconductor bidirectional switch Granted JPS5655070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13074779A JPS5655070A (en) 1979-10-12 1979-10-12 Semiconductor bidirectional switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13074779A JPS5655070A (en) 1979-10-12 1979-10-12 Semiconductor bidirectional switch

Publications (2)

Publication Number Publication Date
JPS5655070A true JPS5655070A (en) 1981-05-15
JPS6148789B2 JPS6148789B2 (en) 1986-10-25

Family

ID=15041661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13074779A Granted JPS5655070A (en) 1979-10-12 1979-10-12 Semiconductor bidirectional switch

Country Status (1)

Country Link
JP (1) JPS5655070A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939564A (en) * 1988-05-13 1990-07-03 Kabushiki Kaisha Toshiba Gate-controlled bidirectional semiconductor switching device with rectifier
US6037613A (en) * 1997-02-24 2000-03-14 Sharp Kabushiki Kaisha Bidirectional thyristor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235784U (en) * 1988-08-31 1990-03-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939564A (en) * 1988-05-13 1990-07-03 Kabushiki Kaisha Toshiba Gate-controlled bidirectional semiconductor switching device with rectifier
US6037613A (en) * 1997-02-24 2000-03-14 Sharp Kabushiki Kaisha Bidirectional thyristor device

Also Published As

Publication number Publication date
JPS6148789B2 (en) 1986-10-25

Similar Documents

Publication Publication Date Title
GB945112A (en) Improvements in or relating to signal translating arrangements using two terminal negative resistance semi-conductive devices
US3812405A (en) Stable thyristor device
ATE107440T1 (en) MONOLITHIC INTEGRATED TRANSISTOR CIRCUIT FOR LIMITING POSITIVE OVERVOLTAGE.
ES8301391A1 (en) High-voltage semiconductor switch.
KR920003012B1 (en) Bidirection control rectificatton semiconductor devices
JPH0330512A (en) Control circuit
JPS5655070A (en) Semiconductor bidirectional switch
US4807009A (en) Lateral transistor
KR930702790A (en) Fast Turn-Off Thyristor Structure
JPS5587391A (en) Semiconductor memory circuit device
JPS5580350A (en) Semiconductor integrated circuit
JPS5524415A (en) Iil semiconductor device
JPS6471178A (en) Bipolar semiconductor device
Wu et al. Theoretical and experimental characterization of the dual-base transistor (DUBAT)
JPS56101767A (en) Semiconductor integrated circuit
JPS6431452A (en) Semiconductor integrated circuit containing current mirror
JPS57198657A (en) Semiconductor device
JPS54162481A (en) Semiconductor switch
JPS55117270A (en) Junction breakdown type field programmable cell array semiconductor device
JPS5496382A (en) Semiconductor integrated circuit device
SU1422379A1 (en) Pulse shaper
JPS5715466A (en) Semiconductor device
JPS6461940A (en) Semiconductor element
JPS5735366A (en) Semiconductor integrated circuit device
JPS54146545A (en) Constant current integrated circuit element