JPS56134738A - Method of forming pattern - Google Patents

Method of forming pattern

Info

Publication number
JPS56134738A
JPS56134738A JP3757080A JP3757080A JPS56134738A JP S56134738 A JPS56134738 A JP S56134738A JP 3757080 A JP3757080 A JP 3757080A JP 3757080 A JP3757080 A JP 3757080A JP S56134738 A JPS56134738 A JP S56134738A
Authority
JP
Japan
Prior art keywords
etching
partial pressure
pressure ratio
ratio
cf3br
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3757080A
Other languages
Japanese (ja)
Inventor
Masahiro Shibagaki
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3757080A priority Critical patent/JPS56134738A/en
Publication of JPS56134738A publication Critical patent/JPS56134738A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Abstract

PURPOSE:To enable an ion-etching to be made even in a comparatively high pressure by a method wherein CF3X and (X)2 or (X')2 are used as induction gases (X, X' are the halogen elements other than F). CONSTITUTION:A high frequency voltage is applied to cathode to make it glow discharge, while CF3Br+Cl2 is induced 8 in a chamber 1 and exhausted. AT this time, an etching speed of Si increases with an increase of the partial pressure ratio of the Cl2 and indicates the maximum at 60% of the partial pressure ratio. On the other hand, the etching speed of SiO2 decreases monotonically and the etching ratio of Si/SiO2 reaches as much as 14 at 80% of the partial pressure ratio of the Cl2. CF3Br+Br2 also shows a high selectivity at 50% of the partial pressure ratio. A carbon plate 6 on the negative plate 6 prevents the appearance of reservoirs and an organic film of hydrocarbon system is sufficient as well. Thus, an isotropic etching is prevented and the ion-etching is made possible even in the comparatively high pressure by utilizing the fact that, for example, when CBrF3 makes discharge, Br is dissociated to make the production of F-radical difficult.
JP3757080A 1980-03-26 1980-03-26 Method of forming pattern Pending JPS56134738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3757080A JPS56134738A (en) 1980-03-26 1980-03-26 Method of forming pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3757080A JPS56134738A (en) 1980-03-26 1980-03-26 Method of forming pattern

Publications (1)

Publication Number Publication Date
JPS56134738A true JPS56134738A (en) 1981-10-21

Family

ID=12501178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3757080A Pending JPS56134738A (en) 1980-03-26 1980-03-26 Method of forming pattern

Country Status (1)

Country Link
JP (1) JPS56134738A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967635A (en) * 1982-07-06 1984-04-17 テキサス・インスツルメンツ・インコ−ポレイテツド Chemical composition for plasma etching for anisotropic etc-hing of silicon
JPS5982729A (en) * 1982-11-02 1984-05-12 Toshiba Corp Plasma etching method
JPS5982730A (en) * 1982-11-02 1984-05-12 Toshiba Corp Plasma etching method
EP0296419A2 (en) * 1987-06-24 1988-12-28 Tegal Corporation Xenon enhanced plasma etch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521596A (en) * 1978-07-31 1980-02-15 Western Electric Co Article production by plasma etching
JPS5521595A (en) * 1978-07-31 1980-02-15 Western Electric Co Article production by plasma etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521596A (en) * 1978-07-31 1980-02-15 Western Electric Co Article production by plasma etching
JPS5521595A (en) * 1978-07-31 1980-02-15 Western Electric Co Article production by plasma etching

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967635A (en) * 1982-07-06 1984-04-17 テキサス・インスツルメンツ・インコ−ポレイテツド Chemical composition for plasma etching for anisotropic etc-hing of silicon
JPH05217956A (en) * 1982-07-06 1993-08-27 Texas Instr Inc <Ti> Anisotropic plasma etching method
JPS5982729A (en) * 1982-11-02 1984-05-12 Toshiba Corp Plasma etching method
JPS5982730A (en) * 1982-11-02 1984-05-12 Toshiba Corp Plasma etching method
JPH0559578B2 (en) * 1982-11-02 1993-08-31 Tokyo Shibaura Electric Co
EP0296419A2 (en) * 1987-06-24 1988-12-28 Tegal Corporation Xenon enhanced plasma etch
EP0296419A3 (en) * 1987-06-24 1990-02-21 Tegal Corporation Xenon enhanced plasma etch

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