JPS5612955B2 - - Google Patents
Info
- Publication number
- JPS5612955B2 JPS5612955B2 JP6787276A JP6787276A JPS5612955B2 JP S5612955 B2 JPS5612955 B2 JP S5612955B2 JP 6787276 A JP6787276 A JP 6787276A JP 6787276 A JP6787276 A JP 6787276A JP S5612955 B2 JPS5612955 B2 JP S5612955B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/591,988 US3983545A (en) | 1975-06-30 | 1975-06-30 | Random access memory employing single ended sense latch for one device cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS526039A JPS526039A (en) | 1977-01-18 |
JPS5612955B2 true JPS5612955B2 (ja) | 1981-03-25 |
Family
ID=24368792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51067872A Granted JPS526039A (en) | 1975-06-30 | 1976-06-11 | Amplifying and sensing latch |
Country Status (4)
Country | Link |
---|---|
US (1) | US3983545A (ja) |
JP (1) | JPS526039A (ja) |
DE (1) | DE2628383C2 (ja) |
GB (1) | GB1538282A (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2647394C2 (de) * | 1976-10-20 | 1978-11-16 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MOS-Halbleiterspeicherbaustein |
JPS53106205A (en) * | 1977-02-28 | 1978-09-16 | Toppan Printing Co Ltd | Ink composition |
US4107556A (en) * | 1977-05-12 | 1978-08-15 | Rca Corporation | Sense circuit employing complementary field effect transistors |
US4114055A (en) * | 1977-05-12 | 1978-09-12 | Rca Corporation | Unbalanced sense circuit |
US4096401A (en) * | 1977-05-12 | 1978-06-20 | Rca Corporation | Sense circuit for an MNOS array using a pair of CMOS inverters cross-coupled via CMOS gates which are responsive to the input sense signals |
US4219834A (en) * | 1977-11-11 | 1980-08-26 | International Business Machines Corporation | One-device monolithic random access memory and method of fabricating same |
DE2824727A1 (de) * | 1978-06-06 | 1979-12-13 | Ibm Deutschland | Schaltung zum nachladen der ausgangsknoten von feldeffekt-transistorschaltungen |
JPS5558154A (en) * | 1978-10-24 | 1980-04-30 | Toshimitsu Mushiya | Electronic diagnosis device |
US4461965A (en) * | 1980-08-18 | 1984-07-24 | National Semiconductor Corporation | High speed CMOS sense amplifier |
US5119332A (en) * | 1981-05-13 | 1992-06-02 | Hitachi, Ltd. | Semiconductor memory |
JPS57186289A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory |
JPS59501980A (ja) * | 1982-11-08 | 1984-11-29 | キヤタピラ−インダストリアルインコ−ポレ−テツド | 回転案内部材の調整可能な取付装置 |
US4625300A (en) * | 1982-12-01 | 1986-11-25 | Texas Instruments Incorporated | Single-ended sense amplifier for dynamic memory array |
US4669063A (en) * | 1982-12-30 | 1987-05-26 | Thomson Components-Mostek Corp. | Sense amplifier for a dynamic RAM |
US4695740A (en) * | 1984-09-26 | 1987-09-22 | Xilinx, Inc. | Bidirectional buffer amplifier |
US4837465A (en) * | 1985-01-16 | 1989-06-06 | Digital Equipment Corp | Single rail CMOS register array and sense amplifier circuit therefor |
JP2871087B2 (ja) * | 1990-11-30 | 1999-03-17 | 日本電気株式会社 | フリップフロップ回路 |
TW223172B (en) * | 1992-12-22 | 1994-05-01 | Siemens Ag | Siganl sensing circuits for memory system using dynamic gain memory cells |
US5724299A (en) * | 1996-04-30 | 1998-03-03 | Sun Microsystems, Inc. | Multiport register file memory using small voltage swing for write operation |
US6060919A (en) * | 1998-12-04 | 2000-05-09 | Ramtron International Corporation | CMOS preferred state power-up latch |
FR2787922B1 (fr) | 1998-12-23 | 2002-06-28 | St Microelectronics Sa | Cellule memoire a programmation unique en technologie cmos |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131744A (ja) * | 1973-04-18 | 1974-12-17 | ||
JPS5020626A (ja) * | 1973-05-17 | 1975-03-05 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740732A (en) * | 1971-08-12 | 1973-06-19 | Texas Instruments Inc | Dynamic data storage cell |
BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
US3745539A (en) * | 1972-03-20 | 1973-07-10 | Ibm | Latch type regenerative circuit for reading a dynamic memory cell |
US3748498A (en) * | 1972-07-27 | 1973-07-24 | American Micro Syst | Low voltage quasi static flip-flop |
-
1975
- 1975-06-30 US US05/591,988 patent/US3983545A/en not_active Expired - Lifetime
-
1976
- 1976-06-02 GB GB22843/76A patent/GB1538282A/en not_active Expired
- 1976-06-11 JP JP51067872A patent/JPS526039A/ja active Granted
- 1976-06-24 DE DE2628383A patent/DE2628383C2/de not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131744A (ja) * | 1973-04-18 | 1974-12-17 | ||
JPS5020626A (ja) * | 1973-05-17 | 1975-03-05 |
Also Published As
Publication number | Publication date |
---|---|
DE2628383A1 (de) | 1977-01-27 |
JPS526039A (en) | 1977-01-18 |
GB1538282A (en) | 1979-01-17 |
DE2628383C2 (de) | 1985-01-31 |
US3983545A (en) | 1976-09-28 |