JPS56124238A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56124238A JPS56124238A JP2661780A JP2661780A JPS56124238A JP S56124238 A JPS56124238 A JP S56124238A JP 2661780 A JP2661780 A JP 2661780A JP 2661780 A JP2661780 A JP 2661780A JP S56124238 A JPS56124238 A JP S56124238A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- pressure
- layer
- film
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0101—Neon [Ne]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To prevent the deformation caused by the creeping of the electrode film in a compressed type semiconductor device by a method wherein the inharmoniousness of the pressure welding strength between the electrode members to be pressure-welded for a wide area and the pressure welding strength between the electrode members to be pressure-welded on a narrow area is removed. CONSTITUTION:An n<+> layer 211 is formed by performing a P-diffusion from one side and a pB layer 13 and a pB 11 layer are formed simultaneously by performing a Ga-diffusion from both sides using an n type Si substrate 1 as base. Then, an nE layer 14 and an n<+> layer 214 are formed simultaneously by performing a B-diffusion from one side and subsequently, the concaved section to be used for a gate electrode 3 is formed by performing an etching. Then, an anode 5 is soldered using an Au-Sb alloy, an Al cathode 2, the gate electrode 3 and a film 22 are provided, and in between them an SiO2 film is covered. An electrode 2 and the film 22 are connected by placing a W buffer plate 4 on them, a Cu electrode is contacted to the W plate 4 and an electrode 5 and the pressure of approximately 1,000kg is applied. This pressure is applied not only to the cathode 2, but also to the metal film 22 having the same height and the pressure per unit are is decreased, thereby enabling to prevent the deformation caused by the creeping of the Al cathode 2 and to obtain an excellent electrical and thermal contact.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2661780A JPS56124238A (en) | 1980-03-05 | 1980-03-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2661780A JPS56124238A (en) | 1980-03-05 | 1980-03-05 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56124238A true JPS56124238A (en) | 1981-09-29 |
JPS6226582B2 JPS6226582B2 (en) | 1987-06-09 |
Family
ID=12198437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2661780A Granted JPS56124238A (en) | 1980-03-05 | 1980-03-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56124238A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184565A (en) * | 1983-03-31 | 1984-10-19 | ベ−・ベ−・ツエ−・アクチエンゲゼルシヤフト・ブラウン・ボヴエリ・ウント・コンパニイ | Power semiconductor structure element and method of producing same |
JPS6337660A (en) * | 1986-07-30 | 1988-02-18 | ビ−ビ−シ− ブラウン ボヴエリ アクチエンゲゼルシヤフト | Pressurized contact type gto thyristor |
JPH0457370A (en) * | 1990-06-27 | 1992-02-25 | Toyo Electric Mfg Co Ltd | Electrostatic inductive semiconductor element suited to pressure-welded package structure |
-
1980
- 1980-03-05 JP JP2661780A patent/JPS56124238A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184565A (en) * | 1983-03-31 | 1984-10-19 | ベ−・ベ−・ツエ−・アクチエンゲゼルシヤフト・ブラウン・ボヴエリ・ウント・コンパニイ | Power semiconductor structure element and method of producing same |
JPS6337660A (en) * | 1986-07-30 | 1988-02-18 | ビ−ビ−シ− ブラウン ボヴエリ アクチエンゲゼルシヤフト | Pressurized contact type gto thyristor |
JPH0457370A (en) * | 1990-06-27 | 1992-02-25 | Toyo Electric Mfg Co Ltd | Electrostatic inductive semiconductor element suited to pressure-welded package structure |
Also Published As
Publication number | Publication date |
---|---|
JPS6226582B2 (en) | 1987-06-09 |
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