JPS56120169A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56120169A JPS56120169A JP2293780A JP2293780A JPS56120169A JP S56120169 A JPS56120169 A JP S56120169A JP 2293780 A JP2293780 A JP 2293780A JP 2293780 A JP2293780 A JP 2293780A JP S56120169 A JPS56120169 A JP S56120169A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- cathode
- current
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To raise surge voltage resistance in the reverse direction by a method wherein on the surface of an n<-> epitaxial layer held between an n<+> cathode layer and a p<+> separating layer is provided an n<+> layer in specified width which is separated at distances x2 and x1 from both cathode and separating layers respectively and surrounds the cathode layer and the distance x1 is made smaller than the thickness of the epitaxial layer directly under the cathode layer. CONSTITUTION:When the surge voltage in the reverse direction is applied to the anode 6 (p<+> separating layer 4) and the cathode (N<+> layer 3), it makes punch- through between the layers 8 and 4, a current flowing along the surface of the epitaxial layer 2 flows inside of the epitaxial layer 2 between the layers 8 and 3, and the resistance thereof restricts the punch-through current and increase voltage breaking strength. The dimension x2 is made large, (w) is made small and the resistance of the n<+> layer 8 along the direction (y) is made large, thereby the expansion of the punch-through current in the direction (y) being prevented and current restricting resistance being increased. In the case when forward voltage is applied between the electrodes 6 and 7, the surface resistance of the epitaxial layer 2 is increased due to the restricting resistance, but the drop of voltage is not increased since the current flows mainly from the n<+> layer 3 to a p type substrate 1 just under the layer 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293780A JPS56120169A (en) | 1980-02-25 | 1980-02-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293780A JPS56120169A (en) | 1980-02-25 | 1980-02-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56120169A true JPS56120169A (en) | 1981-09-21 |
JPS6327865B2 JPS6327865B2 (en) | 1988-06-06 |
Family
ID=12096540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2293780A Granted JPS56120169A (en) | 1980-02-25 | 1980-02-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120169A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673649A (en) * | 1991-12-26 | 1994-03-15 | Goosen:Kk | Braid like yarn |
JP2006179823A (en) * | 2004-12-24 | 2006-07-06 | Matsushita Electric Ind Co Ltd | Surge protecting semiconductor device and its manufacturing method |
CN104009094A (en) * | 2013-02-25 | 2014-08-27 | 株式会社东芝 | Semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63191754A (en) * | 1987-01-21 | 1988-08-09 | 日本テクトロン株式会社 | Reagent container |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50108885A (en) * | 1974-01-31 | 1975-08-27 |
-
1980
- 1980-02-25 JP JP2293780A patent/JPS56120169A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50108885A (en) * | 1974-01-31 | 1975-08-27 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673649A (en) * | 1991-12-26 | 1994-03-15 | Goosen:Kk | Braid like yarn |
JP2006179823A (en) * | 2004-12-24 | 2006-07-06 | Matsushita Electric Ind Co Ltd | Surge protecting semiconductor device and its manufacturing method |
CN104009094A (en) * | 2013-02-25 | 2014-08-27 | 株式会社东芝 | Semiconductor device |
JP2014165317A (en) * | 2013-02-25 | 2014-09-08 | Toshiba Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6327865B2 (en) | 1988-06-06 |
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