JPS56120169A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56120169A
JPS56120169A JP2293780A JP2293780A JPS56120169A JP S56120169 A JPS56120169 A JP S56120169A JP 2293780 A JP2293780 A JP 2293780A JP 2293780 A JP2293780 A JP 2293780A JP S56120169 A JPS56120169 A JP S56120169A
Authority
JP
Japan
Prior art keywords
layer
resistance
cathode
current
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2293780A
Other languages
Japanese (ja)
Other versions
JPS6327865B2 (en
Inventor
Kunihiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2293780A priority Critical patent/JPS56120169A/en
Publication of JPS56120169A publication Critical patent/JPS56120169A/en
Publication of JPS6327865B2 publication Critical patent/JPS6327865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To raise surge voltage resistance in the reverse direction by a method wherein on the surface of an n<-> epitaxial layer held between an n<+> cathode layer and a p<+> separating layer is provided an n<+> layer in specified width which is separated at distances x2 and x1 from both cathode and separating layers respectively and surrounds the cathode layer and the distance x1 is made smaller than the thickness of the epitaxial layer directly under the cathode layer. CONSTITUTION:When the surge voltage in the reverse direction is applied to the anode 6 (p<+> separating layer 4) and the cathode (N<+> layer 3), it makes punch- through between the layers 8 and 4, a current flowing along the surface of the epitaxial layer 2 flows inside of the epitaxial layer 2 between the layers 8 and 3, and the resistance thereof restricts the punch-through current and increase voltage breaking strength. The dimension x2 is made large, (w) is made small and the resistance of the n<+> layer 8 along the direction (y) is made large, thereby the expansion of the punch-through current in the direction (y) being prevented and current restricting resistance being increased. In the case when forward voltage is applied between the electrodes 6 and 7, the surface resistance of the epitaxial layer 2 is increased due to the restricting resistance, but the drop of voltage is not increased since the current flows mainly from the n<+> layer 3 to a p type substrate 1 just under the layer 3.
JP2293780A 1980-02-25 1980-02-25 Semiconductor device Granted JPS56120169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2293780A JPS56120169A (en) 1980-02-25 1980-02-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2293780A JPS56120169A (en) 1980-02-25 1980-02-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56120169A true JPS56120169A (en) 1981-09-21
JPS6327865B2 JPS6327865B2 (en) 1988-06-06

Family

ID=12096540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2293780A Granted JPS56120169A (en) 1980-02-25 1980-02-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56120169A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673649A (en) * 1991-12-26 1994-03-15 Goosen:Kk Braid like yarn
JP2006179823A (en) * 2004-12-24 2006-07-06 Matsushita Electric Ind Co Ltd Surge protecting semiconductor device and its manufacturing method
CN104009094A (en) * 2013-02-25 2014-08-27 株式会社东芝 Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191754A (en) * 1987-01-21 1988-08-09 日本テクトロン株式会社 Reagent container

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50108885A (en) * 1974-01-31 1975-08-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50108885A (en) * 1974-01-31 1975-08-27

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673649A (en) * 1991-12-26 1994-03-15 Goosen:Kk Braid like yarn
JP2006179823A (en) * 2004-12-24 2006-07-06 Matsushita Electric Ind Co Ltd Surge protecting semiconductor device and its manufacturing method
CN104009094A (en) * 2013-02-25 2014-08-27 株式会社东芝 Semiconductor device
JP2014165317A (en) * 2013-02-25 2014-09-08 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6327865B2 (en) 1988-06-06

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