JPS56116634A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56116634A JPS56116634A JP1901380A JP1901380A JPS56116634A JP S56116634 A JPS56116634 A JP S56116634A JP 1901380 A JP1901380 A JP 1901380A JP 1901380 A JP1901380 A JP 1901380A JP S56116634 A JPS56116634 A JP S56116634A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- rinsed
- impurities
- wiring
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the corrosion of Al wiring by a method wherein impurities such as Na on the surface of a pellet are rinsed with water and removed to form a passive film on an Al layer on the surface of the pellet in a high temperature humid atmosphere. CONSTITUTION:A pellet 7 is fixed to a tab 1 of a lead frame 6, while a lead 2 is connected to the electrode of the pellet with a gold wire 8. Next the surface of the pellet is rinsed with an organic solvent and water to remove organic polluants and other impurities such as Na<+>, Cl, etc. Then, the pellet is preheated at temperature of about 100 deg.C and exposed to steam with temperature of about 200 deg.C. This provides the surface of Al wiring 10 on the pellet 7 with a passive film that consists of Al2O3.nH2O. The pellet is dried before being sealed with a resin and separated from the lead frame. According to this construction, the Al layer to be exposed is made passive with certainty, so that the device can offer improved dampproofness.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1901380A JPS56116634A (en) | 1980-02-20 | 1980-02-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1901380A JPS56116634A (en) | 1980-02-20 | 1980-02-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116634A true JPS56116634A (en) | 1981-09-12 |
Family
ID=11987608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1901380A Pending JPS56116634A (en) | 1980-02-20 | 1980-02-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116634A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6226834A (en) * | 1985-07-26 | 1987-02-04 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS63128634A (en) * | 1986-11-18 | 1988-06-01 | Nec Corp | Manufacture of semiconductor device |
US5565378A (en) * | 1992-02-17 | 1996-10-15 | Mitsubishi Denki Kabushiki Kaisha | Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution |
US5595934A (en) * | 1995-05-17 | 1997-01-21 | Samsung Electronics Co., Ltd. | Method for forming oxide protective film on bonding pads of semiconductor chips by UV/O3 treatment |
EP1160864A3 (en) * | 2000-05-16 | 2004-01-14 | NEC Electronics Corporation | Semiconductor device with a corrosion resistant bonding pad and manufacturing method thereof |
-
1980
- 1980-02-20 JP JP1901380A patent/JPS56116634A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6226834A (en) * | 1985-07-26 | 1987-02-04 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH04595B2 (en) * | 1985-07-26 | 1992-01-08 | Mitsubishi Electric Corp | |
JPS63128634A (en) * | 1986-11-18 | 1988-06-01 | Nec Corp | Manufacture of semiconductor device |
JPH0546978B2 (en) * | 1986-11-18 | 1993-07-15 | Nippon Electric Co | |
US5565378A (en) * | 1992-02-17 | 1996-10-15 | Mitsubishi Denki Kabushiki Kaisha | Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution |
US5595934A (en) * | 1995-05-17 | 1997-01-21 | Samsung Electronics Co., Ltd. | Method for forming oxide protective film on bonding pads of semiconductor chips by UV/O3 treatment |
EP1160864A3 (en) * | 2000-05-16 | 2004-01-14 | NEC Electronics Corporation | Semiconductor device with a corrosion resistant bonding pad and manufacturing method thereof |
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