JPS56112747A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56112747A
JPS56112747A JP1552580A JP1552580A JPS56112747A JP S56112747 A JPS56112747 A JP S56112747A JP 1552580 A JP1552580 A JP 1552580A JP 1552580 A JP1552580 A JP 1552580A JP S56112747 A JPS56112747 A JP S56112747A
Authority
JP
Japan
Prior art keywords
semiconductor device
hno3
cleaned
pure water
60sec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1552580A
Other languages
Japanese (ja)
Inventor
Mitsusachi Matsuzaki
Kensuke Suzuki
Nobuo Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1552580A priority Critical patent/JPS56112747A/en
Publication of JPS56112747A publication Critical patent/JPS56112747A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To eliminate the deterioration of reverse withstand voltage characteristics of the semiconductor device having a member containing Ag by etching the semiconductor device with acid containing HF and HNO3 and then dissolving and removing the Ag adhered to the Si in the step of etching with another solution. CONSTITUTION:An electrode 13 and a copper lead wire 11 covered with silver 12 are connected to a semiconductor pellet 14, the diode assembly or the like of the semiconductor device sealed with glass material 15 is etched, for example, with the acid containing HF and HNO3 for 220 seconds, cleaned with pure water for 60sec, etched with solution diluted with pure water to have concentration of 0.15-8mol from the mixture of HNO3 and/or HC for 20sec and cleaned with pure water for 60sec. It is then dipped in alcohol for 10sec, N2 gas is sprayed for 10sec, and it is thus dried. The pellet can be cleaned without deteriorating the characteristics by cleaning as above, and the rate of the occurrence of improper semiconductor devices can be reduced.
JP1552580A 1980-02-13 1980-02-13 Manufacture of semiconductor device Pending JPS56112747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1552580A JPS56112747A (en) 1980-02-13 1980-02-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1552580A JPS56112747A (en) 1980-02-13 1980-02-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56112747A true JPS56112747A (en) 1981-09-05

Family

ID=11891218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1552580A Pending JPS56112747A (en) 1980-02-13 1980-02-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112747A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6848780B2 (en) 1997-07-15 2005-02-01 Sivlerbrook Research Pty Ltd Printing mechanism for a wide format pagewidth inkjet printer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6848780B2 (en) 1997-07-15 2005-02-01 Sivlerbrook Research Pty Ltd Printing mechanism for a wide format pagewidth inkjet printer

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