JPS56107574A - Semiconductor memory storage device - Google Patents

Semiconductor memory storage device

Info

Publication number
JPS56107574A
JPS56107574A JP906980A JP906980A JPS56107574A JP S56107574 A JPS56107574 A JP S56107574A JP 906980 A JP906980 A JP 906980A JP 906980 A JP906980 A JP 906980A JP S56107574 A JPS56107574 A JP S56107574A
Authority
JP
Japan
Prior art keywords
capacity
transistors
flip
gates
flop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP906980A
Other languages
Japanese (ja)
Other versions
JPS60781B2 (en
Inventor
Noboru Hirakawa
Toru Tsujiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55009069A priority Critical patent/JPS60781B2/en
Priority to EP81100607A priority patent/EP0033159B1/en
Priority to DE8181100607T priority patent/DE3163340D1/en
Publication of JPS56107574A publication Critical patent/JPS56107574A/en
Priority to US06/555,420 priority patent/US4590508A/en
Publication of JPS60781B2 publication Critical patent/JPS60781B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To keep off an influence of alpha rays by providing a capacity between a gate electrode of a flip-flop transistor constituting a memory cell and a constant voltage source. CONSTITUTION:A memory cell is constituted of flip-flop transistors Q1, Q2 having gates and drains connected crosswise, transfer gate transistors Q3, Q4 having gates connected to a word line, a load resistance RL and a gate capacity CS. One end of the capacity CS is connected to the gates of the transistors Q1, Q2, and the other end is connected to a fixed potential VFIX. The capacity CS stores and holds gate potentials of the transistors Q1, Q2 given at writing according to the above constitution, therefore a flip-flop can be kept stable against external factors of alpha particles and others.
JP55009069A 1980-01-29 1980-01-29 semiconductor storage device Expired JPS60781B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55009069A JPS60781B2 (en) 1980-01-29 1980-01-29 semiconductor storage device
EP81100607A EP0033159B1 (en) 1980-01-29 1981-01-28 Semiconductor device
DE8181100607T DE3163340D1 (en) 1980-01-29 1981-01-28 Semiconductor device
US06/555,420 US4590508A (en) 1980-01-29 1983-11-29 MOS static ram with capacitively loaded gates to prevent alpha soft errors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55009069A JPS60781B2 (en) 1980-01-29 1980-01-29 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS56107574A true JPS56107574A (en) 1981-08-26
JPS60781B2 JPS60781B2 (en) 1985-01-10

Family

ID=11710315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55009069A Expired JPS60781B2 (en) 1980-01-29 1980-01-29 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS60781B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155752A (en) * 1982-03-12 1983-09-16 Hitachi Ltd Semiconductor memory storage
JPS58165376A (en) * 1982-03-03 1983-09-30 Fujitsu Ltd Semiconductor memory device
JPS5923559A (en) * 1982-07-30 1984-02-07 Nec Corp Semiconductor device
JPS6074563A (en) * 1983-09-30 1985-04-26 Toshiba Corp Semiconductor memory device
JPS61128557A (en) * 1984-11-28 1986-06-16 Hitachi Ltd Semiconductor memory storage
JPH0430391A (en) * 1990-05-28 1992-02-03 Toshiba Corp Static type semiconductor memory

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165376A (en) * 1982-03-03 1983-09-30 Fujitsu Ltd Semiconductor memory device
JPS602781B2 (en) * 1982-03-03 1985-01-23 富士通株式会社 semiconductor storage device
JPS58155752A (en) * 1982-03-12 1983-09-16 Hitachi Ltd Semiconductor memory storage
JPS5923559A (en) * 1982-07-30 1984-02-07 Nec Corp Semiconductor device
JPS6074563A (en) * 1983-09-30 1985-04-26 Toshiba Corp Semiconductor memory device
JPS61128557A (en) * 1984-11-28 1986-06-16 Hitachi Ltd Semiconductor memory storage
JPH0430391A (en) * 1990-05-28 1992-02-03 Toshiba Corp Static type semiconductor memory

Also Published As

Publication number Publication date
JPS60781B2 (en) 1985-01-10

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