JPS5746388A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5746388A
JPS5746388A JP55121887A JP12188780A JPS5746388A JP S5746388 A JPS5746388 A JP S5746388A JP 55121887 A JP55121887 A JP 55121887A JP 12188780 A JP12188780 A JP 12188780A JP S5746388 A JPS5746388 A JP S5746388A
Authority
JP
Japan
Prior art keywords
gate
drain
memory device
semiconductor memory
trq42
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55121887A
Other languages
Japanese (ja)
Inventor
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55121887A priority Critical patent/JPS5746388A/en
Publication of JPS5746388A publication Critical patent/JPS5746388A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To realize a high-speed operation of a semiconductor memory device without lowering the S/N, by carrying out the refresh action, the writing and reading actions in the independent timing respectively. CONSTITUTION:The source of a MOS transistor (TR) Q22 is connected to the reference potential (the earth potential in this example), and a drain is connected the data line BL via a TRQ12 that constitutes a transfer gate. The source and the gate of a TRQ42 are connected to the gate of the TRQ22 and the drain of a TRQ32 with the drain connected to a refresh terminal R in common with a memory cell. A capacity C is connected between the gate of the TRQ42 and the terminal R. Furthermore a word line WL is connected to the gate of the TRQ12, and the drain of the TRQ22 is connected to a power source VCC via a load resistance RL.
JP55121887A 1980-09-03 1980-09-03 Semiconductor memory device Pending JPS5746388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121887A JPS5746388A (en) 1980-09-03 1980-09-03 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121887A JPS5746388A (en) 1980-09-03 1980-09-03 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5746388A true JPS5746388A (en) 1982-03-16

Family

ID=14822363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121887A Pending JPS5746388A (en) 1980-09-03 1980-09-03 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5746388A (en)

Similar Documents

Publication Publication Date Title
JPS6466899A (en) Memory cell
KR880006837A (en) Sense Amplifiers for High Performance DRAM
GB1523094A (en) Semiconductor memory cell circuits
JPS5564686A (en) Memory unit
ATE161652T1 (en) MEMORY CELL
EP0331322A3 (en) Memory devices
KR870009396A (en) Nonvolatile Semiconductor Memory
EP0107387A3 (en) Semiconductor memory device
KR860003604A (en) Semiconductor memory device
KR940004515B1 (en) Dynamic semiconductor memory device
KR870008320A (en) Semiconductor memory device composed of different type memory cells
KR960030408A (en) Semiconductor memory
JPS5661088A (en) Semiconductor memory device
JPS56117389A (en) Static type random access memory
JPS57109190A (en) Semiconductor storage device and its manufacture
JPS57113482A (en) Semiconductor storage device
US4380055A (en) Static RAM memory cell
KR870002589A (en) Semiconductor memory with column transfer gate transistor rolls independently of sense amplifier and programming circuit
JPS5785255A (en) Memory storage for integrated circuit
KR880006698A (en) I / O circuit of SeaMOS semiconductor memory device
IE811741L (en) Semiconductor read only memory device
JPS5693178A (en) Semiconductor memory device
KR900008523A (en) Semiconductor memory device
JPS5746388A (en) Semiconductor memory device
JPS55157194A (en) Semiconductor memory device