JPS56105628A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
JPS56105628A
JPS56105628A JP857780A JP857780A JPS56105628A JP S56105628 A JPS56105628 A JP S56105628A JP 857780 A JP857780 A JP 857780A JP 857780 A JP857780 A JP 857780A JP S56105628 A JPS56105628 A JP S56105628A
Authority
JP
Japan
Prior art keywords
liquid
epitaxial growth
liquid phase
magnetic field
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP857780A
Other languages
Japanese (ja)
Inventor
Nobuyuki Izawa
Toshihiko Suzuki
Kinji Hoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP857780A priority Critical patent/JPS56105628A/en
Priority to GB8029356A priority patent/GB2059932B/en
Priority to FR8019942A priority patent/FR2465802B1/en
Priority to DE19803035267 priority patent/DE3035267A1/en
Priority to NL8005228A priority patent/NL8005228A/en
Priority to IT24803/80A priority patent/IT1141064B/en
Priority to SE8006569A priority patent/SE8006569L/en
Priority to CA000360638A priority patent/CA1177367A/en
Priority to AT0473180A priority patent/AT398582B/en
Publication of JPS56105628A publication Critical patent/JPS56105628A/en
Priority to US06/339,065 priority patent/US4619730A/en
Priority to US06/562,015 priority patent/US4622211A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/103—Current controlled or induced growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enable to obtain the crystal growth film having a superior crystallinity and uniform thickness by a method wherein the liquid phase epitaxial growth is performed in the condition applying a magnetic field to the epitaxial liquid. CONSTITUTION:When the dipping method is to be performed, the magnetic field generated by a magnetic field generating means 7 is applied to the liquid 1 to form the crystal growth film, and a substrate 4 to be made the growth is dept in the liquid in this condition to perform the epitaxial growth. When the magnetic field is applied like this to the liquid 1 on the occasion of the liquid phase epitaxial growth, the apparent viscosity of the liquid 1 is elevated and the convection of the liquid 1 is suppressed. Accordingly the crystal growth film having the superior crystallinity and uniform thickness, being avoided to be mixed with a needless impurity and having a good quality, can be made to grow on the substrate 4 even by the dipping method. The same effect can be also obtained when the liquid phase epitaxial growth is to be performed by the sliding method and the spin method.
JP857780A 1979-09-20 1980-01-28 Liquid phase epitaxial growth Pending JPS56105628A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP857780A JPS56105628A (en) 1980-01-28 1980-01-28 Liquid phase epitaxial growth
GB8029356A GB2059932B (en) 1979-09-20 1980-09-11 Solidification processes
FR8019942A FR2465802B1 (en) 1979-09-20 1980-09-16 PROCESS FOR SOLIDIFYING A FLUID SUCH AS A SILICON BATH AND PROCESS OBTAINED
DE19803035267 DE3035267A1 (en) 1979-09-20 1980-09-18 METHOD FOR STRENGTHENING LIQUID MATERIALS
IT24803/80A IT1141064B (en) 1979-09-20 1980-09-19 SOLIDIFICATION PROCESS
NL8005228A NL8005228A (en) 1979-09-20 1980-09-19 METHOD FOR PROCESSING THE TRANSITION IN FIXED STATE.
SE8006569A SE8006569L (en) 1979-09-20 1980-09-19 STELNINGSFORFARANDE
CA000360638A CA1177367A (en) 1979-09-20 1980-09-19 Process for solidification
AT0473180A AT398582B (en) 1979-09-20 1980-09-22 CRYSTAL GROWING METHOD
US06/339,065 US4619730A (en) 1979-09-20 1982-01-13 Process for solidification in a magnetic field with a D.C. heater
US06/562,015 US4622211A (en) 1979-09-20 1983-12-16 Apparatus for solidification with resistance heater and magnets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP857780A JPS56105628A (en) 1980-01-28 1980-01-28 Liquid phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS56105628A true JPS56105628A (en) 1981-08-22

Family

ID=11696873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP857780A Pending JPS56105628A (en) 1979-09-20 1980-01-28 Liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS56105628A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58149618U (en) * 1982-04-01 1983-10-07 スタンレー電気株式会社 Anti-theft mounting bolt

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS=1966 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58149618U (en) * 1982-04-01 1983-10-07 スタンレー電気株式会社 Anti-theft mounting bolt

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