JPS56100451A - Manufacture of electrode of semiconductor device - Google Patents

Manufacture of electrode of semiconductor device

Info

Publication number
JPS56100451A
JPS56100451A JP277680A JP277680A JPS56100451A JP S56100451 A JPS56100451 A JP S56100451A JP 277680 A JP277680 A JP 277680A JP 277680 A JP277680 A JP 277680A JP S56100451 A JPS56100451 A JP S56100451A
Authority
JP
Japan
Prior art keywords
electrode
layer
film
metal
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP277680A
Other languages
Japanese (ja)
Inventor
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP277680A priority Critical patent/JPS56100451A/en
Publication of JPS56100451A publication Critical patent/JPS56100451A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce a value of contact resistance and obtain a uniform electrode by forming the electrode by application of a laser beam to a window for electrode in a semiconductor substrate in vacuum and then by evaporation of metal thereon. CONSTITUTION:An n layer is provided on the P type substrate, while the window for electrode is provided in an SiO2 film 3. The laser beam is applied in vacuum and the surface of the n layer 2 thus exposed in heated at high temperature. By this heating, impurities, organic substances and the thin SiO2 film on the surface are vaporized and thereby the surface is purified. Al7 is evaporated immediately, whereon an alloy film 8 such as Si and further Cu is laid. Finally, the metal films 7 and 8 are etched selectively, thereby an electrode pattern is provided, the device thus prepared is processed in N at about 400 deg.C, Si and metal are alloyed on the interface between the film 7 and the n layer 2, and thus ohmic connection is completed. By this method, cooling is performed in a short time since the uppermost surface layer of the substrate alone is heated, and thus the electrode which has low value of contact resistance and uniformity can be obtained.
JP277680A 1980-01-14 1980-01-14 Manufacture of electrode of semiconductor device Pending JPS56100451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP277680A JPS56100451A (en) 1980-01-14 1980-01-14 Manufacture of electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP277680A JPS56100451A (en) 1980-01-14 1980-01-14 Manufacture of electrode of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56100451A true JPS56100451A (en) 1981-08-12

Family

ID=11538737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP277680A Pending JPS56100451A (en) 1980-01-14 1980-01-14 Manufacture of electrode of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56100451A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477144A (en) * 1987-09-18 1989-03-23 Nec Corp Growth method of metallic film for semiconductor device
US4957880A (en) * 1985-05-29 1990-09-18 Kabushiki Kaisha Toshiba Method for producing semiconductor device including a refractory metal pattern
US5279973A (en) * 1990-10-16 1994-01-18 Kabushiki Kaisha Toshiba Rapid thermal annealing for semiconductor substrate by using incoherent light
US6645359B1 (en) 2000-10-06 2003-11-11 Roche Diagnostics Corporation Biosensor
US6662439B1 (en) 1999-10-04 2003-12-16 Roche Diagnostics Corporation Laser defined features for patterned laminates and electrodes
US6866758B2 (en) 2002-03-21 2005-03-15 Roche Diagnostics Corporation Biosensor
US6911621B2 (en) 2000-11-01 2005-06-28 Roche Diagnostics Corporation Biosensor
US7073246B2 (en) 1999-10-04 2006-07-11 Roche Diagnostics Operations, Inc. Method of making a biosensor
US7476827B1 (en) 2001-08-29 2009-01-13 Roche Diagnostics Operations, Inc. Method of making a biosensor
CN108155144A (en) * 2016-12-02 2018-06-12 中芯国际集成电路制造(上海)有限公司 A kind of production method of semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52124883A (en) * 1976-04-12 1977-10-20 Mitsubishi Electric Corp Local connection method of semiconductor crystal substrate and metal wiring

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52124883A (en) * 1976-04-12 1977-10-20 Mitsubishi Electric Corp Local connection method of semiconductor crystal substrate and metal wiring

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957880A (en) * 1985-05-29 1990-09-18 Kabushiki Kaisha Toshiba Method for producing semiconductor device including a refractory metal pattern
JPS6477144A (en) * 1987-09-18 1989-03-23 Nec Corp Growth method of metallic film for semiconductor device
US5279973A (en) * 1990-10-16 1994-01-18 Kabushiki Kaisha Toshiba Rapid thermal annealing for semiconductor substrate by using incoherent light
US6662439B1 (en) 1999-10-04 2003-12-16 Roche Diagnostics Corporation Laser defined features for patterned laminates and electrodes
US7073246B2 (en) 1999-10-04 2006-07-11 Roche Diagnostics Operations, Inc. Method of making a biosensor
US7386937B2 (en) 1999-10-04 2008-06-17 Roche Diagnostics Operations, Inc. Method of making a biosensor
US6645359B1 (en) 2000-10-06 2003-11-11 Roche Diagnostics Corporation Biosensor
US6911621B2 (en) 2000-11-01 2005-06-28 Roche Diagnostics Corporation Biosensor
US7476827B1 (en) 2001-08-29 2009-01-13 Roche Diagnostics Operations, Inc. Method of making a biosensor
US6866758B2 (en) 2002-03-21 2005-03-15 Roche Diagnostics Corporation Biosensor
CN108155144A (en) * 2016-12-02 2018-06-12 中芯国际集成电路制造(上海)有限公司 A kind of production method of semiconductor devices

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