JPS5599769A - Semicondcutor device - Google Patents
Semicondcutor deviceInfo
- Publication number
- JPS5599769A JPS5599769A JP798279A JP798279A JPS5599769A JP S5599769 A JPS5599769 A JP S5599769A JP 798279 A JP798279 A JP 798279A JP 798279 A JP798279 A JP 798279A JP S5599769 A JPS5599769 A JP S5599769A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal
- area
- bonding pad
- removal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE: To increase yields, by forming part or the entire area of a bonding pad to be 10μm or more wide from the insulation film removal line formed on the bonding pad.
CONSTITUTION: Metal film 2 formed on insulation oxide film 3 on semiconductor substrate 4 is anode-oxidized, and the metal region, except for the wiring part, and the upper surface of the metal film of the wiring part are converted into metal oxide film 1. Bonding pad (BP) 2 is provided in the metal wiring for connecting to an external electrode or for inspection of the characteristics, but the area of film 1 on BP to be removed is left as it is. When the area of BP is widened to d2, even if the position of the metal probe comes near the film removal line on BP, since wall 8 on the boundary between BP and the film is far away, the pressure of the probe onto insulating oxide film 3 of BP is weak, so that the probe slides sideway but does not cause a crack. For determining the size in expanding the area of BP, distance d2 from the insulating film removal line on BP is set at 10μm or more.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP798279A JPS5599769A (en) | 1979-01-25 | 1979-01-25 | Semicondcutor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP798279A JPS5599769A (en) | 1979-01-25 | 1979-01-25 | Semicondcutor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5599769A true JPS5599769A (en) | 1980-07-30 |
JPS6346573B2 JPS6346573B2 (en) | 1988-09-16 |
Family
ID=11680637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP798279A Granted JPS5599769A (en) | 1979-01-25 | 1979-01-25 | Semicondcutor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599769A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4870475A (en) * | 1971-12-23 | 1973-09-25 | ||
JPS5353969U (en) * | 1976-10-08 | 1978-05-09 |
-
1979
- 1979-01-25 JP JP798279A patent/JPS5599769A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4870475A (en) * | 1971-12-23 | 1973-09-25 | ||
JPS5353969U (en) * | 1976-10-08 | 1978-05-09 |
Also Published As
Publication number | Publication date |
---|---|
JPS6346573B2 (en) | 1988-09-16 |
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