JPS5582482A - Semiconductor luminous device - Google Patents
Semiconductor luminous deviceInfo
- Publication number
- JPS5582482A JPS5582482A JP15596078A JP15596078A JPS5582482A JP S5582482 A JPS5582482 A JP S5582482A JP 15596078 A JP15596078 A JP 15596078A JP 15596078 A JP15596078 A JP 15596078A JP S5582482 A JPS5582482 A JP S5582482A
- Authority
- JP
- Japan
- Prior art keywords
- light
- active layer
- layers
- striped
- wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To heighten the rectilinear properties of the output characteristics of currents to light, by mounting light confining layers consisting of materials, whose band gaps are narrow than a central, active layer, at the both sides of striped- double-heterogeneous junction.
CONSTITUTION: Clad layers 3, a contact layer 4 and a substrate 5 are installed holding an active layer 1 obtained by slightly adding Al to GaAs, and light confining layers 2 are formed by disposing layers gained by epitaxial growth of GaAs whose band gaps are narrower than the central active layer 1 at the both sides of the striped-double-heterogeneous junction. The layers 2 indicate a large absorption coefficient to the light with a short-wave length of the active layer 1, light is wave- guided in degree stronger than inverse wave-guide by a refractive index and confined in a striped shape, thereby stable lateral mode oscillation can be realized, and rectilinear properties can be heightened.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15596078A JPS5582482A (en) | 1978-12-16 | 1978-12-16 | Semiconductor luminous device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15596078A JPS5582482A (en) | 1978-12-16 | 1978-12-16 | Semiconductor luminous device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5582482A true JPS5582482A (en) | 1980-06-21 |
Family
ID=15617285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15596078A Pending JPS5582482A (en) | 1978-12-16 | 1978-12-16 | Semiconductor luminous device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5582482A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6450481A (en) * | 1987-07-27 | 1989-02-27 | Ortel Corp | Super light emitting diode and single mode laser |
JPH0697496A (en) * | 1992-09-14 | 1994-04-08 | Rohm Co Ltd | Super luminescent diode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5284990A (en) * | 1976-01-07 | 1977-07-14 | Hitachi Ltd | Buryied type semiconductor laer |
JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
-
1978
- 1978-12-16 JP JP15596078A patent/JPS5582482A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5284990A (en) * | 1976-01-07 | 1977-07-14 | Hitachi Ltd | Buryied type semiconductor laer |
JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6450481A (en) * | 1987-07-27 | 1989-02-27 | Ortel Corp | Super light emitting diode and single mode laser |
JPH0697496A (en) * | 1992-09-14 | 1994-04-08 | Rohm Co Ltd | Super luminescent diode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5320881A (en) | Photo semiconductor device | |
JPS5269285A (en) | Semiconductor laser device | |
JPS5582482A (en) | Semiconductor luminous device | |
JPS52146574A (en) | Semiconductor device | |
JPS5320786A (en) | Injection type semiconductor laser element | |
JPS53128288A (en) | Semiconductor laser element and production of the same | |
JPS5636184A (en) | Manufacture of semiconductor laser | |
JPS55140286A (en) | Buried heterogeneous structure semiconductor for use in laser | |
JPS5336189A (en) | Semiconductor junction laser | |
JPS5769793A (en) | Semiconductor laser device | |
JPS559480A (en) | Large light output, lateral mode of semiconductor laser element | |
JPS5591894A (en) | Semiconductor light emission device | |
JPS5524418A (en) | Light integrated circuit | |
JPS5688389A (en) | Semiconductor light emitting device | |
JPS5778193A (en) | Semiconductor laser | |
JPS55125692A (en) | Semiconductor laser | |
JPS55128894A (en) | Semiconductor light emitting device and method of fabricating the same | |
JPS54138386A (en) | Semiconductor laser device of current narrow type | |
JPS5724587A (en) | Light-emitting device | |
JPS54115087A (en) | Double hetero junction laser of stripe type | |
JPS56100488A (en) | Semiconductor laser device | |
JPS52149485A (en) | Injection type semiconductor laser element | |
JPS5425185A (en) | Semiconductor laser device and its manufacture | |
JPS5669884A (en) | Injection type laser | |
JPS56124286A (en) | Semiconductor laser device |