JPS5582482A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS5582482A
JPS5582482A JP15596078A JP15596078A JPS5582482A JP S5582482 A JPS5582482 A JP S5582482A JP 15596078 A JP15596078 A JP 15596078A JP 15596078 A JP15596078 A JP 15596078A JP S5582482 A JPS5582482 A JP S5582482A
Authority
JP
Japan
Prior art keywords
light
active layer
layers
striped
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15596078A
Other languages
Japanese (ja)
Inventor
Hiroshi Ishikawa
Takao Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15596078A priority Critical patent/JPS5582482A/en
Publication of JPS5582482A publication Critical patent/JPS5582482A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To heighten the rectilinear properties of the output characteristics of currents to light, by mounting light confining layers consisting of materials, whose band gaps are narrow than a central, active layer, at the both sides of striped- double-heterogeneous junction.
CONSTITUTION: Clad layers 3, a contact layer 4 and a substrate 5 are installed holding an active layer 1 obtained by slightly adding Al to GaAs, and light confining layers 2 are formed by disposing layers gained by epitaxial growth of GaAs whose band gaps are narrower than the central active layer 1 at the both sides of the striped-double-heterogeneous junction. The layers 2 indicate a large absorption coefficient to the light with a short-wave length of the active layer 1, light is wave- guided in degree stronger than inverse wave-guide by a refractive index and confined in a striped shape, thereby stable lateral mode oscillation can be realized, and rectilinear properties can be heightened.
COPYRIGHT: (C)1980,JPO&Japio
JP15596078A 1978-12-16 1978-12-16 Semiconductor luminous device Pending JPS5582482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15596078A JPS5582482A (en) 1978-12-16 1978-12-16 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15596078A JPS5582482A (en) 1978-12-16 1978-12-16 Semiconductor luminous device

Publications (1)

Publication Number Publication Date
JPS5582482A true JPS5582482A (en) 1980-06-21

Family

ID=15617285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15596078A Pending JPS5582482A (en) 1978-12-16 1978-12-16 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS5582482A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450481A (en) * 1987-07-27 1989-02-27 Ortel Corp Super light emitting diode and single mode laser
JPH0697496A (en) * 1992-09-14 1994-04-08 Rohm Co Ltd Super luminescent diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284990A (en) * 1976-01-07 1977-07-14 Hitachi Ltd Buryied type semiconductor laer
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284990A (en) * 1976-01-07 1977-07-14 Hitachi Ltd Buryied type semiconductor laer
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450481A (en) * 1987-07-27 1989-02-27 Ortel Corp Super light emitting diode and single mode laser
JPH0697496A (en) * 1992-09-14 1994-04-08 Rohm Co Ltd Super luminescent diode

Similar Documents

Publication Publication Date Title
JPS5320881A (en) Photo semiconductor device
JPS5269285A (en) Semiconductor laser device
JPS5582482A (en) Semiconductor luminous device
JPS52146574A (en) Semiconductor device
JPS5320786A (en) Injection type semiconductor laser element
JPS53128288A (en) Semiconductor laser element and production of the same
JPS5636184A (en) Manufacture of semiconductor laser
JPS55140286A (en) Buried heterogeneous structure semiconductor for use in laser
JPS5336189A (en) Semiconductor junction laser
JPS5769793A (en) Semiconductor laser device
JPS559480A (en) Large light output, lateral mode of semiconductor laser element
JPS5591894A (en) Semiconductor light emission device
JPS5524418A (en) Light integrated circuit
JPS5688389A (en) Semiconductor light emitting device
JPS5778193A (en) Semiconductor laser
JPS55125692A (en) Semiconductor laser
JPS55128894A (en) Semiconductor light emitting device and method of fabricating the same
JPS54138386A (en) Semiconductor laser device of current narrow type
JPS5724587A (en) Light-emitting device
JPS54115087A (en) Double hetero junction laser of stripe type
JPS56100488A (en) Semiconductor laser device
JPS52149485A (en) Injection type semiconductor laser element
JPS5425185A (en) Semiconductor laser device and its manufacture
JPS5669884A (en) Injection type laser
JPS56124286A (en) Semiconductor laser device