JPS5591870A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5591870A JPS5591870A JP16497278A JP16497278A JPS5591870A JP S5591870 A JPS5591870 A JP S5591870A JP 16497278 A JP16497278 A JP 16497278A JP 16497278 A JP16497278 A JP 16497278A JP S5591870 A JPS5591870 A JP S5591870A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- operating
- silicon
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To reduce the step working process, by forming wing regions of a low impurity concentration adjacent to a drain region by diffusing an impurity from a silicon film, containing an impurity, which is formed selectively by means of an oxide film, without using ion injection.
CONSTITUTION: After field-use, heat-oxidized film 2, and gate oxide film 2G are formed on a p-type silicon semiconductor substrate 1; a silicon gate electrode 3G is formed and its surface is covered with an oxide film 4G. Next, a silicon film 5 is formed, and by operating patterning of a gate oxide film 2G, source and drain forming windows are formed. Next, phosphoric silicate glass film 6 is formed, and by operating heat treatment, n+-type source region 7 and n+-type drain region 8 are formed. At the same time, wing region 8' is formed. Subsequently, by operating patterning of phosphoric silicate glass film 6, electrode contact windows are formed, and by operating heat treatment, metal electrodes and wirings are formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16497278A JPS5591870A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16497278A JPS5591870A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591870A true JPS5591870A (en) | 1980-07-11 |
Family
ID=15803372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16497278A Pending JPS5591870A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591870A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04349514A (en) * | 1991-05-27 | 1992-12-04 | Toyota Autom Loom Works Ltd | Turnover mechanism for clutch pedal |
-
1978
- 1978-12-28 JP JP16497278A patent/JPS5591870A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04349514A (en) * | 1991-05-27 | 1992-12-04 | Toyota Autom Loom Works Ltd | Turnover mechanism for clutch pedal |
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