JPS5591860A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5591860A JPS5591860A JP16581078A JP16581078A JPS5591860A JP S5591860 A JPS5591860 A JP S5591860A JP 16581078 A JP16581078 A JP 16581078A JP 16581078 A JP16581078 A JP 16581078A JP S5591860 A JPS5591860 A JP S5591860A
- Authority
- JP
- Japan
- Prior art keywords
- conduction type
- layer
- polycrystalline layer
- semiconductor substrate
- single crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53165810A JPS6053473B2 (ja) | 1978-12-30 | 1978-12-30 | 半導体記憶装置 |
EP79301928A EP0009910B1 (en) | 1978-09-20 | 1979-09-18 | Semiconductor memory device and process for fabricating the device |
CA000335866A CA1144646A (en) | 1978-09-20 | 1979-09-18 | Dynamic ram having buried capacitor and planar gate |
DE7979301928T DE2967388D1 (en) | 1978-09-20 | 1979-09-18 | Semiconductor memory device and process for fabricating the device |
US06/076,993 US4329704A (en) | 1978-09-20 | 1979-09-19 | MOS Random access memory with buried storage capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53165810A JPS6053473B2 (ja) | 1978-12-30 | 1978-12-30 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591860A true JPS5591860A (en) | 1980-07-11 |
JPS6053473B2 JPS6053473B2 (ja) | 1985-11-26 |
Family
ID=15819417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53165810A Expired JPS6053473B2 (ja) | 1978-09-20 | 1978-12-30 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6053473B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5003361A (en) * | 1987-08-31 | 1991-03-26 | At&T Bell Laboratories | Active dynamic memory cell |
-
1978
- 1978-12-30 JP JP53165810A patent/JPS6053473B2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5003361A (en) * | 1987-08-31 | 1991-03-26 | At&T Bell Laboratories | Active dynamic memory cell |
Also Published As
Publication number | Publication date |
---|---|
JPS6053473B2 (ja) | 1985-11-26 |
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