JPS5591860A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5591860A
JPS5591860A JP16581078A JP16581078A JPS5591860A JP S5591860 A JPS5591860 A JP S5591860A JP 16581078 A JP16581078 A JP 16581078A JP 16581078 A JP16581078 A JP 16581078A JP S5591860 A JPS5591860 A JP S5591860A
Authority
JP
Japan
Prior art keywords
conduction type
layer
polycrystalline layer
semiconductor substrate
single crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16581078A
Other languages
Japanese (ja)
Other versions
JPS6053473B2 (en
Inventor
Junji Sakurai
Kiyoshi Miyasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53165810A priority Critical patent/JPS6053473B2/en
Priority to DE7979301928T priority patent/DE2967388D1/en
Priority to CA000335866A priority patent/CA1144646A/en
Priority to EP79301928A priority patent/EP0009910B1/en
Priority to US06/076,993 priority patent/US4329704A/en
Publication of JPS5591860A publication Critical patent/JPS5591860A/en
Publication of JPS6053473B2 publication Critical patent/JPS6053473B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the degree of integration and simplify the processing work, by reducing the overlap capacitance of a gate, a source and a drain and using the self- alignment method. CONSTITUTION:Reverse conduction type buried-in layer 22 and insulating layer 23 are formed on one conduction type semiconductor substrate 21, and further, single crystals 24S, 25S and polycrystalline layer 24P' are grown on a semiconductor substrate 21. Opposite conduction type impurity regions 27' and 28' are formed on single crystal layers 24S, 25S and polycrystalline layer 24P'. Source electrode 27 is formed over single crystals 24S and 25S and polycrystalline layer 24P', and further, drain electrode 28 and gate oxide film 30 are formed.
JP53165810A 1978-09-20 1978-12-30 semiconductor storage device Expired JPS6053473B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP53165810A JPS6053473B2 (en) 1978-12-30 1978-12-30 semiconductor storage device
DE7979301928T DE2967388D1 (en) 1978-09-20 1979-09-18 Semiconductor memory device and process for fabricating the device
CA000335866A CA1144646A (en) 1978-09-20 1979-09-18 Dynamic ram having buried capacitor and planar gate
EP79301928A EP0009910B1 (en) 1978-09-20 1979-09-18 Semiconductor memory device and process for fabricating the device
US06/076,993 US4329704A (en) 1978-09-20 1979-09-19 MOS Random access memory with buried storage capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53165810A JPS6053473B2 (en) 1978-12-30 1978-12-30 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5591860A true JPS5591860A (en) 1980-07-11
JPS6053473B2 JPS6053473B2 (en) 1985-11-26

Family

ID=15819417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53165810A Expired JPS6053473B2 (en) 1978-09-20 1978-12-30 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6053473B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell

Also Published As

Publication number Publication date
JPS6053473B2 (en) 1985-11-26

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