JPS5588381A - Preparation of gallium phosphide red light-emitting diode - Google Patents
Preparation of gallium phosphide red light-emitting diodeInfo
- Publication number
- JPS5588381A JPS5588381A JP16601878A JP16601878A JPS5588381A JP S5588381 A JPS5588381 A JP S5588381A JP 16601878 A JP16601878 A JP 16601878A JP 16601878 A JP16601878 A JP 16601878A JP S5588381 A JPS5588381 A JP S5588381A
- Authority
- JP
- Japan
- Prior art keywords
- gallium phosphide
- growing
- preparation
- emitting diode
- red light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To improve ligh emission brightness and extend life by growing a p-type gallium phosphide layer on the surface of n-type gallium phosphide to form a pn junction and heat-treating at a specified temperature and for a specified time.
CONSTITUTION: A pn junction is formed by growing an n-type growth layer whose impurity is tellurium on an n-type gallium phosphide substrate by a liquid phase epitaxial growth method, and on the layer, growing a p-type growth layer whose impurities are zinc and oxygen. Next, the substrate is heat-treated at 440∼480°C for 13∼30hr. By so doing, zinc-oxygen pairs are stabilized and light emission brightness is improved and also the life can be extended.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601878A JPS5588381A (en) | 1978-12-26 | 1978-12-26 | Preparation of gallium phosphide red light-emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601878A JPS5588381A (en) | 1978-12-26 | 1978-12-26 | Preparation of gallium phosphide red light-emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5588381A true JPS5588381A (en) | 1980-07-04 |
Family
ID=15823381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16601878A Pending JPS5588381A (en) | 1978-12-26 | 1978-12-26 | Preparation of gallium phosphide red light-emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5588381A (en) |
-
1978
- 1978-12-26 JP JP16601878A patent/JPS5588381A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1470744A (en) | Light emitting semi-conductor devices | |
JPS55141769A (en) | Electric field light emitting element | |
JPS5588381A (en) | Preparation of gallium phosphide red light-emitting diode | |
JPS5453974A (en) | Manufacture for gallium phosphide green light emitting element | |
JPS55124280A (en) | Method of fabricating light emitting diode | |
JPS561528A (en) | Manufacture of epitaxial wafer of 3-5 group compound semiconductor | |
JPS5423391A (en) | Gallium-arsenic semiconductor element | |
JPS5563887A (en) | Light-emitting diode | |
JPS54152485A (en) | Electrode forming method for gallium phosphide light- emitting diode | |
JPS5443483A (en) | Manufacture of light emitting diode | |
JPS5437098A (en) | Method of producing gallium phosphide greenish luminous element | |
JPS5418691A (en) | Manufacture of pn-junction type light emitting diode | |
JPS5451493A (en) | Semiconductor light emitting device | |
JPS55105389A (en) | Manufacture of light emission diode | |
JPS55108785A (en) | Galium phosphide green luminous element | |
JPS53119297A (en) | Liquid phase growh method of gallium phosphide red luminous element | |
JPS5563889A (en) | Method of manufacturing green light emission gap diode | |
JPS54107276A (en) | Production of semiconductor device | |
JPS5437486A (en) | Manufacture of gallium phosphate green-color luminous element | |
JPS561529A (en) | Manufacture of epitaxial wafer of 3-5 group compound semiconductor | |
JPS5453977A (en) | Manufacture for gallium phosphide green light emitting element | |
GB1526452A (en) | Electroluminescent diodes and a method of manufacturing same | |
JPS5453976A (en) | Gallium phosphide green light emitting element | |
JPS54130888A (en) | Semiconductor luminous display device | |
JPS54117692A (en) | Semiconductor light emitting diode |