JPS5578542A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5578542A
JPS5578542A JP15346878A JP15346878A JPS5578542A JP S5578542 A JPS5578542 A JP S5578542A JP 15346878 A JP15346878 A JP 15346878A JP 15346878 A JP15346878 A JP 15346878A JP S5578542 A JPS5578542 A JP S5578542A
Authority
JP
Japan
Prior art keywords
layer
substrate
atm
type impurity
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15346878A
Other languages
Japanese (ja)
Inventor
Kenjiro Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP15346878A priority Critical patent/JPS5578542A/en
Publication of JPS5578542A publication Critical patent/JPS5578542A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To keep a mask from getting out of position in alignment by a method wherein the second layer same in polarity but different in impurity density from the first layer is formed on the surface of a substrate forming the first layer, and cuts deep enough to reach the substrate from the second layer surface are provided in two or more.
CONSTITUTION: A buried layer 2 is formed by heating and diffusing an n-type impurity small in diffusion coefficient like Sb or As on a substrate 1 including a p-type impurity at 1016W1018atm/cm3 at 2W4μm in depth and 1017W1020atm/cm3 in surface density. An epitaxial layer 3 including an n-type impurity 1013W1014 atm/cm3 in impurity density and 6W10μm thick is accumulated. An oxidized film 5 is formed, and a window is provided on the oxidized film 5 through ordinary photomasking. An exposed Si is formed to V-groove 6 deep enough to reach the substrate 1 with anisotropic etching reagent.
COPYRIGHT: (C)1980,JPO&Japio
JP15346878A 1978-12-11 1978-12-11 Manufacture of semiconductor device Pending JPS5578542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15346878A JPS5578542A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15346878A JPS5578542A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5578542A true JPS5578542A (en) 1980-06-13

Family

ID=15563217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15346878A Pending JPS5578542A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578542A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855679A (en) * 1971-11-12 1973-08-04
JPS5253673A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Device and production for semiconductor
JPS5320875A (en) * 1976-08-11 1978-02-25 Fujitsu Ltd Semiconductor integrated circuit device
JPS53112072A (en) * 1977-03-11 1978-09-30 Handotai Kenkyu Shinkokai Semiconductor ic

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855679A (en) * 1971-11-12 1973-08-04
JPS5253673A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Device and production for semiconductor
JPS5320875A (en) * 1976-08-11 1978-02-25 Fujitsu Ltd Semiconductor integrated circuit device
JPS53112072A (en) * 1977-03-11 1978-09-30 Handotai Kenkyu Shinkokai Semiconductor ic

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