JPS5578542A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5578542A JPS5578542A JP15346878A JP15346878A JPS5578542A JP S5578542 A JPS5578542 A JP S5578542A JP 15346878 A JP15346878 A JP 15346878A JP 15346878 A JP15346878 A JP 15346878A JP S5578542 A JPS5578542 A JP S5578542A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- atm
- type impurity
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To keep a mask from getting out of position in alignment by a method wherein the second layer same in polarity but different in impurity density from the first layer is formed on the surface of a substrate forming the first layer, and cuts deep enough to reach the substrate from the second layer surface are provided in two or more.
CONSTITUTION: A buried layer 2 is formed by heating and diffusing an n-type impurity small in diffusion coefficient like Sb or As on a substrate 1 including a p-type impurity at 1016W1018atm/cm3 at 2W4μm in depth and 1017W1020atm/cm3 in surface density. An epitaxial layer 3 including an n-type impurity 1013W1014 atm/cm3 in impurity density and 6W10μm thick is accumulated. An oxidized film 5 is formed, and a window is provided on the oxidized film 5 through ordinary photomasking. An exposed Si is formed to V-groove 6 deep enough to reach the substrate 1 with anisotropic etching reagent.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15346878A JPS5578542A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15346878A JPS5578542A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5578542A true JPS5578542A (en) | 1980-06-13 |
Family
ID=15563217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15346878A Pending JPS5578542A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5578542A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4855679A (en) * | 1971-11-12 | 1973-08-04 | ||
JPS5253673A (en) * | 1975-10-29 | 1977-04-30 | Hitachi Ltd | Device and production for semiconductor |
JPS5320875A (en) * | 1976-08-11 | 1978-02-25 | Fujitsu Ltd | Semiconductor integrated circuit device |
JPS53112072A (en) * | 1977-03-11 | 1978-09-30 | Handotai Kenkyu Shinkokai | Semiconductor ic |
-
1978
- 1978-12-11 JP JP15346878A patent/JPS5578542A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4855679A (en) * | 1971-11-12 | 1973-08-04 | ||
JPS5253673A (en) * | 1975-10-29 | 1977-04-30 | Hitachi Ltd | Device and production for semiconductor |
JPS5320875A (en) * | 1976-08-11 | 1978-02-25 | Fujitsu Ltd | Semiconductor integrated circuit device |
JPS53112072A (en) * | 1977-03-11 | 1978-09-30 | Handotai Kenkyu Shinkokai | Semiconductor ic |
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