JPS5574137A - Production of wafer - Google Patents
Production of waferInfo
- Publication number
- JPS5574137A JPS5574137A JP14820778A JP14820778A JPS5574137A JP S5574137 A JPS5574137 A JP S5574137A JP 14820778 A JP14820778 A JP 14820778A JP 14820778 A JP14820778 A JP 14820778A JP S5574137 A JPS5574137 A JP S5574137A
- Authority
- JP
- Japan
- Prior art keywords
- gold plating
- sodium
- gold
- wafer
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 5
- 239000010931 gold Substances 0.000 abstract 5
- 229910052737 gold Inorganic materials 0.000 abstract 5
- 238000007747 plating Methods 0.000 abstract 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract 3
- 238000002845 discoloration Methods 0.000 abstract 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 abstract 2
- 229910052714 tellurium Inorganic materials 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000013019 agitation Methods 0.000 abstract 1
- SRRYZMQPLOIHRP-UHFFFAOYSA-L dipotassium;tellurate Chemical compound [K+].[K+].[O-][Te]([O-])(=O)=O SRRYZMQPLOIHRP-UHFFFAOYSA-L 0.000 abstract 1
- 238000005868 electrolysis reaction Methods 0.000 abstract 1
- 239000012634 fragment Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 abstract 1
- 229940048086 sodium pyrophosphate Drugs 0.000 abstract 1
- 235000010265 sodium sulphite Nutrition 0.000 abstract 1
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 abstract 1
- 235000019818 tetrasodium diphosphate Nutrition 0.000 abstract 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To eliminate damage to the resist film provided while avoiding discoloration in the subsequent thermal process by using a non-cyan pure gold plating liquid containing tellurium at least above 10ppm, in the gold plating of a silicon wafer.
CONSTITUTION: When a gold plating is made on a silicone wafer, for example, the following gold plating composition is used: 10g for gold (as sodium gold sulfite), 50g of sodium pyrophosphate, 40g of sodium sulfite and 60ppm of tellurium (as potassium tellurate) are mixed in terms of the total capacity of 1l with a pH of 9.0 (controlled by sodium hydroxide). The electrolysis is subject to the temperature of 50°C, the current density of 0.5A/dm2 and an agitation normally for 7 minutes. The treatment according to those mentioned above eliminates dislocation and missing in fine fragments of the resist film while no discoloration takes place in the wafer even under the thermal treatment at 420°C.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14820778A JPS5574137A (en) | 1978-11-30 | 1978-11-30 | Production of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14820778A JPS5574137A (en) | 1978-11-30 | 1978-11-30 | Production of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5574137A true JPS5574137A (en) | 1980-06-04 |
Family
ID=15447649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14820778A Pending JPS5574137A (en) | 1978-11-30 | 1978-11-30 | Production of wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574137A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0257687A (en) * | 1988-08-20 | 1990-02-27 | Fujitsu Ltd | Gold plating method |
| CN104357883A (en) * | 2014-11-20 | 2015-02-18 | 中国地质大学（武汉） | Cyanide-free electroforming gold solution and gold electroforming method |
| JP7017664B1 (en) * | 2021-11-11 | 2022-02-08 | 松田産業株式会社 | Nosian electrolytic gold plating solution |
-
1978
- 1978-11-30 JP JP14820778A patent/JPS5574137A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0257687A (en) * | 1988-08-20 | 1990-02-27 | Fujitsu Ltd | Gold plating method |
| CN104357883A (en) * | 2014-11-20 | 2015-02-18 | 中国地质大学（武汉） | Cyanide-free electroforming gold solution and gold electroforming method |
| JP7017664B1 (en) * | 2021-11-11 | 2022-02-08 | 松田産業株式会社 | Nosian electrolytic gold plating solution |
| WO2023084803A1 (en) * | 2021-11-11 | 2023-05-19 | 松田産業株式会社 | Non-cyanide electrolytic gold plating solution |
| TWI824497B (en) * | 2021-11-11 | 2023-12-01 | 日商松田產業股份有限公司 | Cyanide-free electrolytic gold plating solution |
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