JPS5567211A - Production of elastic surface wave device - Google Patents
Production of elastic surface wave deviceInfo
- Publication number
- JPS5567211A JPS5567211A JP13988978A JP13988978A JPS5567211A JP S5567211 A JPS5567211 A JP S5567211A JP 13988978 A JP13988978 A JP 13988978A JP 13988978 A JP13988978 A JP 13988978A JP S5567211 A JPS5567211 A JP S5567211A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resistor
- idt
- photo mask
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To make it possible to form comb-shaped electrodes (IDT) on a piezo- electric thin film withiut damage of the piezo-electric thin film by using a photo mask to combine a negative resistor film and a positive resistor film. CONSTITUTION:After sputtering ZnO 2 onto substrate 1, negative resistor 4 having a good heatproof property is formed for formation of comb-shaped electrodes IDT. Next, Al film 3 which is the IDT material is formed throughout the surface of the substrate by evaporation, and positive resistor 4' is covered with the same photo mask as the photo mask used for formation of negative resistor 4. Under this state, ZnO 2 is not exposed. Then, the Al film in the needless part is eliminated by chemical etching. Next, plasma asher is used to eliminate positive and negative resistor films simultaneously.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13988978A JPS5567211A (en) | 1978-11-15 | 1978-11-15 | Production of elastic surface wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13988978A JPS5567211A (en) | 1978-11-15 | 1978-11-15 | Production of elastic surface wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5567211A true JPS5567211A (en) | 1980-05-21 |
Family
ID=15255950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13988978A Pending JPS5567211A (en) | 1978-11-15 | 1978-11-15 | Production of elastic surface wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5567211A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01259611A (en) * | 1988-04-11 | 1989-10-17 | Fujitsu Ltd | Manufacture of surface acoustic wave device |
US6424075B1 (en) * | 2001-01-26 | 2002-07-23 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device and production method thereof |
-
1978
- 1978-11-15 JP JP13988978A patent/JPS5567211A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01259611A (en) * | 1988-04-11 | 1989-10-17 | Fujitsu Ltd | Manufacture of surface acoustic wave device |
US6424075B1 (en) * | 2001-01-26 | 2002-07-23 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device and production method thereof |
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