JPS5565454A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5565454A JPS5565454A JP13955778A JP13955778A JPS5565454A JP S5565454 A JPS5565454 A JP S5565454A JP 13955778 A JP13955778 A JP 13955778A JP 13955778 A JP13955778 A JP 13955778A JP S5565454 A JPS5565454 A JP S5565454A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- layer
- diode
- separator
- insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To increase strength against electrostatic breakdown without increasing the occupied area required for the separation and insulation of elements. CONSTITUTION:p-Type resistor layer to be provided for the n-layer of semiconductor substrate 4 is divided into layers 7a and 7b. Resistor 7a on the external terminal side is separated and insulated by n-layer 6, and it is connected in series with n-layer 5 including resistor 7b via thin film resistor 11. By this structure, parastic diode 8 from resistor 7b to the power source is produced; and diode 9 from resistor 7a to separator-insulator layer 6, and diode 10 from separator-insulator layer 6 to substrate 4 are connected in parallel to the electrostatic pulse discharge route. In this structure, since resistor 7a is separated and insulated, no discharge pulse enters power supply side wiring 3 from input terminal 1, so that it becomes sufficiently strong against electrostatic breakdown. Further, the area occupied by the layer which separates and insulates the small resistor connected to the external terminal can be made smaller compared with the conventional device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13955778A JPS5565454A (en) | 1978-11-13 | 1978-11-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13955778A JPS5565454A (en) | 1978-11-13 | 1978-11-13 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5565454A true JPS5565454A (en) | 1980-05-16 |
JPS6260816B2 JPS6260816B2 (en) | 1987-12-18 |
Family
ID=15248026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13955778A Granted JPS5565454A (en) | 1978-11-13 | 1978-11-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565454A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57124464A (en) * | 1981-01-26 | 1982-08-03 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US6653713B2 (en) * | 2000-10-13 | 2003-11-25 | Seiko Instruments Inc. | Thin film resistor with stress compensation |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4913092U (en) * | 1972-05-11 | 1974-02-04 | ||
JPS5754288U (en) * | 1980-09-17 | 1982-03-30 |
-
1978
- 1978-11-13 JP JP13955778A patent/JPS5565454A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4913092U (en) * | 1972-05-11 | 1974-02-04 | ||
JPS5754288U (en) * | 1980-09-17 | 1982-03-30 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57124464A (en) * | 1981-01-26 | 1982-08-03 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US6653713B2 (en) * | 2000-10-13 | 2003-11-25 | Seiko Instruments Inc. | Thin film resistor with stress compensation |
Also Published As
Publication number | Publication date |
---|---|
JPS6260816B2 (en) | 1987-12-18 |
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