GB923153A - Semiconductor strain gauge - Google Patents
Semiconductor strain gaugeInfo
- Publication number
- GB923153A GB923153A GB2317561A GB2317561A GB923153A GB 923153 A GB923153 A GB 923153A GB 2317561 A GB2317561 A GB 2317561A GB 2317561 A GB2317561 A GB 2317561A GB 923153 A GB923153 A GB 923153A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- strip
- sensor strips
- strips
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000005275 alloying Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000004568 cement Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
923,153. Measuring electrically. FAIRCHILD SEMICONDUCTOR CORPORATION. June 27, 1961 [Aug. 18, 1960], No. 23175/61. Class 40 (1). [Also in Group XXXVI] A strain gauge comprises a wafer of semiconductor material suitable for mounting upon a test member, at least one strip in the wafer being doped and provided with spaced contacts so that it may be connected in a measuring circuit to indicate variations in the resistance of the strip or strips with strain. As shown, Figs. 1, 2, a wafer of monocrystalline semiconductor material, e.g. P-type Si, comprises on one surface two N-type sensor strips 13, 14 formed by diffusion and disposed in parallel and in alignment with one of the crystal axes. A protective layer 18, e.g. of SiO 2 is formed over the said surface and edges of the wafer; it is etched away or otherwise removed to provide access to the ends of the sensor strips, ohmic metal contacts 19, 191 and 20, 20<SP>1</SP> being alloyed to said ends. A " rosette " gauge (not shown) comprises a plurality of sensor strips extending in different directions from a central point. The wafer may be of intrinsic conductivity. In operation, the device may be bonded to the test member 41, Fig. 4, by alloying using an alloying agent 42, e.g. Au, each sensor strip being electrically insulated from the member 41 by the P-N junction it defines or, in the case of an intrinsic wafer, by the high resistivity of the latter. Alternatively, conventional cements may be used for bonding. The two sensor strips 13, 14, of Fig. 1, may form opposite arms of a Wheatstone bridge measuring circuit.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5051060A | 1960-08-18 | 1960-08-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB923153A true GB923153A (en) | 1963-04-10 |
Family
ID=21965650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2317561A Expired GB923153A (en) | 1960-08-18 | 1961-06-27 | Semiconductor strain gauge |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH391326A (en) |
| GB (1) | GB923153A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3303452A (en) * | 1964-05-12 | 1967-02-07 | Textron Electronics Inc | Piezoresistive device |
| US3329023A (en) * | 1964-08-03 | 1967-07-04 | Schaevitz Bytrex Inc | Semiconductor strain gage transducers |
| US3337780A (en) * | 1964-05-21 | 1967-08-22 | Bell & Howell Co | Resistance oriented semiconductor strain gage with barrier isolated element |
| DE1514082A1 (en) * | 1964-02-13 | 1969-09-18 | Hitachi Ltd | Semiconductor device and method for making the same |
| US3629667A (en) * | 1969-03-14 | 1971-12-21 | Ibm | Semiconductor resistor with uniforms current distribution at its contact surface |
| US3994009A (en) * | 1973-02-12 | 1976-11-23 | Honeywell Inc. | Stress sensor diaphragms over recessed substrates |
| US4151502A (en) * | 1976-04-19 | 1979-04-24 | Hitachi, Ltd. | Semiconductor transducer |
-
1961
- 1961-06-27 GB GB2317561A patent/GB923153A/en not_active Expired
- 1961-08-17 CH CH971961A patent/CH391326A/en unknown
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514082A1 (en) * | 1964-02-13 | 1969-09-18 | Hitachi Ltd | Semiconductor device and method for making the same |
| US3643137A (en) * | 1964-02-13 | 1972-02-15 | Hitachi Ltd | Semiconductor devices |
| US3303452A (en) * | 1964-05-12 | 1967-02-07 | Textron Electronics Inc | Piezoresistive device |
| US3337780A (en) * | 1964-05-21 | 1967-08-22 | Bell & Howell Co | Resistance oriented semiconductor strain gage with barrier isolated element |
| US3329023A (en) * | 1964-08-03 | 1967-07-04 | Schaevitz Bytrex Inc | Semiconductor strain gage transducers |
| US3629667A (en) * | 1969-03-14 | 1971-12-21 | Ibm | Semiconductor resistor with uniforms current distribution at its contact surface |
| US3994009A (en) * | 1973-02-12 | 1976-11-23 | Honeywell Inc. | Stress sensor diaphragms over recessed substrates |
| US4151502A (en) * | 1976-04-19 | 1979-04-24 | Hitachi, Ltd. | Semiconductor transducer |
Also Published As
| Publication number | Publication date |
|---|---|
| CH391326A (en) | 1965-04-30 |
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