JPS5562741A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5562741A
JPS5562741A JP13641378A JP13641378A JPS5562741A JP S5562741 A JPS5562741 A JP S5562741A JP 13641378 A JP13641378 A JP 13641378A JP 13641378 A JP13641378 A JP 13641378A JP S5562741 A JPS5562741 A JP S5562741A
Authority
JP
Japan
Prior art keywords
film
entire surface
opening
implanting
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13641378A
Other languages
Japanese (ja)
Other versions
JPS6048099B2 (en
Inventor
Osamu Hataishi
Yoshinobu Monma
Toshio Kurahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13641378A priority Critical patent/JPS6048099B2/en
Publication of JPS5562741A publication Critical patent/JPS5562741A/en
Publication of JPS6048099B2 publication Critical patent/JPS6048099B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To improve the humidity resistance of a PSG film in a semiconductor device by coating the surface of a semiconductor substrate formed with elements thereon and wired with electrodes by a surface protecting film of the PSG film and implanting aluminum ion on the entire surface after perforating an opening for bonding pad thereon.
CONSTITUTION: A ground layer 1 is formed by a semiconductor substrate provided with transistors and diode, etc. and a passivation film coated on the substrate, predetermined pattern of aluminum wire 2 is provided on the surface of the substrate, and a PSG film 3 is coated on the entire surface thereof. Then, an opening 5 becoming a bonding pad is perforated on the wire 2, and aluminum+ion is implanted on the entire surface thereof. The implanting energy is 40W100keV, and the implanting amount is 1×1014/cm2 as selected. Thus, a shallow ion implanted layer 6 is formed only on the surface layer of the film 3. Thus, an implanted layer 6a is also produced on the wall surface 5a of the opening 5 to occur similar effect to the phosphorus alumino silicate glass on the entire surface of the film 3 to thereby improve the humidity resistance thereon.
COPYRIGHT: (C)1980,JPO&Japio
JP13641378A 1978-11-06 1978-11-06 Manufacturing method of semiconductor device Expired JPS6048099B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13641378A JPS6048099B2 (en) 1978-11-06 1978-11-06 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13641378A JPS6048099B2 (en) 1978-11-06 1978-11-06 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5562741A true JPS5562741A (en) 1980-05-12
JPS6048099B2 JPS6048099B2 (en) 1985-10-25

Family

ID=15174572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13641378A Expired JPS6048099B2 (en) 1978-11-06 1978-11-06 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6048099B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810831A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Manufacture of semiconductor device
US5382549A (en) * 1989-11-10 1995-01-17 Kabushiki Kaisha Toshiba Method of manufacturing polycrystalline silicon having columnar orientation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810831A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Manufacture of semiconductor device
JPH035057B2 (en) * 1981-07-14 1991-01-24 Fujitsu Ltd
US5382549A (en) * 1989-11-10 1995-01-17 Kabushiki Kaisha Toshiba Method of manufacturing polycrystalline silicon having columnar orientation

Also Published As

Publication number Publication date
JPS6048099B2 (en) 1985-10-25

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