JPS5562741A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5562741A JPS5562741A JP13641378A JP13641378A JPS5562741A JP S5562741 A JPS5562741 A JP S5562741A JP 13641378 A JP13641378 A JP 13641378A JP 13641378 A JP13641378 A JP 13641378A JP S5562741 A JPS5562741 A JP S5562741A
- Authority
- JP
- Japan
- Prior art keywords
- film
- entire surface
- opening
- implanting
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To improve the humidity resistance of a PSG film in a semiconductor device by coating the surface of a semiconductor substrate formed with elements thereon and wired with electrodes by a surface protecting film of the PSG film and implanting aluminum ion on the entire surface after perforating an opening for bonding pad thereon.
CONSTITUTION: A ground layer 1 is formed by a semiconductor substrate provided with transistors and diode, etc. and a passivation film coated on the substrate, predetermined pattern of aluminum wire 2 is provided on the surface of the substrate, and a PSG film 3 is coated on the entire surface thereof. Then, an opening 5 becoming a bonding pad is perforated on the wire 2, and aluminum+ion is implanted on the entire surface thereof. The implanting energy is 40W100keV, and the implanting amount is 1×1014/cm2 as selected. Thus, a shallow ion implanted layer 6 is formed only on the surface layer of the film 3. Thus, an implanted layer 6a is also produced on the wall surface 5a of the opening 5 to occur similar effect to the phosphorus alumino silicate glass on the entire surface of the film 3 to thereby improve the humidity resistance thereon.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13641378A JPS6048099B2 (en) | 1978-11-06 | 1978-11-06 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13641378A JPS6048099B2 (en) | 1978-11-06 | 1978-11-06 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5562741A true JPS5562741A (en) | 1980-05-12 |
JPS6048099B2 JPS6048099B2 (en) | 1985-10-25 |
Family
ID=15174572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13641378A Expired JPS6048099B2 (en) | 1978-11-06 | 1978-11-06 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6048099B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5810831A (en) * | 1981-07-14 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
US5382549A (en) * | 1989-11-10 | 1995-01-17 | Kabushiki Kaisha Toshiba | Method of manufacturing polycrystalline silicon having columnar orientation |
-
1978
- 1978-11-06 JP JP13641378A patent/JPS6048099B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5810831A (en) * | 1981-07-14 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH035057B2 (en) * | 1981-07-14 | 1991-01-24 | Fujitsu Ltd | |
US5382549A (en) * | 1989-11-10 | 1995-01-17 | Kabushiki Kaisha Toshiba | Method of manufacturing polycrystalline silicon having columnar orientation |
Also Published As
Publication number | Publication date |
---|---|
JPS6048099B2 (en) | 1985-10-25 |
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