JPS5560095A - Single crystal growing method - Google Patents

Single crystal growing method

Info

Publication number
JPS5560095A
JPS5560095A JP13078878A JP13078878A JPS5560095A JP S5560095 A JPS5560095 A JP S5560095A JP 13078878 A JP13078878 A JP 13078878A JP 13078878 A JP13078878 A JP 13078878A JP S5560095 A JPS5560095 A JP S5560095A
Authority
JP
Japan
Prior art keywords
crystal
seed crystal
mirror
impinges
inclination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13078878A
Other languages
Japanese (ja)
Inventor
Yoshio Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13078878A priority Critical patent/JPS5560095A/en
Publication of JPS5560095A publication Critical patent/JPS5560095A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To grow a single crystal with no angle error by adjusting the inclination of a seed crystal so that a parallel beam reflected at a mirror part formed on a side of the seed crystal impinges on a predetermined position of a scrren indicator, thereby easily adjusting the perpendicularity of the seed crystal.
CONSTITUTION: Part or more of a seed crystal 1 face corresponding to the principal face of a plate crystal to be grown is first mirror-polished in a proper crystal orientation. Crystal 1 is fixed into holder 2, and parallel beam 6 is allowed to impinge on mirror part 5. Inclination θ of crystal 1 is adjusted so that the beam reflected at part 5 impinges on the "+" mark position of screen 8 which position is formed when part 5 becomes perpendicular. Crystal 1 adjusted to the proper perpendicular position is then pulled in the Y axis direction together with holder 2 to obtain a LiNbO3 plate crystal or the like with a predetermined crystal face properly held.
COPYRIGHT: (C)1980,JPO&Japio
JP13078878A 1978-10-24 1978-10-24 Single crystal growing method Pending JPS5560095A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13078878A JPS5560095A (en) 1978-10-24 1978-10-24 Single crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13078878A JPS5560095A (en) 1978-10-24 1978-10-24 Single crystal growing method

Publications (1)

Publication Number Publication Date
JPS5560095A true JPS5560095A (en) 1980-05-06

Family

ID=15042691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13078878A Pending JPS5560095A (en) 1978-10-24 1978-10-24 Single crystal growing method

Country Status (1)

Country Link
JP (1) JPS5560095A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033296A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Pulling device for single crystal semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111478A (en) * 1975-03-26 1976-10-01 Hitachi Ltd A method of producing semiconductor crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111478A (en) * 1975-03-26 1976-10-01 Hitachi Ltd A method of producing semiconductor crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033296A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Pulling device for single crystal semiconductor

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