JPS5559774A - Semiconductor integrated circuit device and method of fabricating the same - Google Patents

Semiconductor integrated circuit device and method of fabricating the same

Info

Publication number
JPS5559774A
JPS5559774A JP13218978A JP13218978A JPS5559774A JP S5559774 A JPS5559774 A JP S5559774A JP 13218978 A JP13218978 A JP 13218978A JP 13218978 A JP13218978 A JP 13218978A JP S5559774 A JPS5559774 A JP S5559774A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13218978A
Other languages
Japanese (ja)
Inventor
Yoji Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13218978A priority Critical patent/JPS5559774A/en
Publication of JPS5559774A publication Critical patent/JPS5559774A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To highly integrate a semiconductor integrated circuit device by positioning a connecting hole adjacent to a gate to thereby eliminate a margin thereat.
CONSTITUTION: A P-type diffused layer 12 and a silicon dioxide film 13 are sequentially formed on a P-type silicon substrate 11. Then, a gate oxide film 14 and a polycrystalline silicon 15 are sequentially formed on the other portion of the substrate 11. Subsequently, source and drain 19, 20 are formed on the substrate 11. After a silicon nitride film 21 is further formed on the film 16, aluminum wires 27, 28 are formed thereon to complete a semiconductor integrated circuit device. Since connecting holes are positioned adjacent to the gate, it can eliminate a margin thereat and adapt for its high integration. Since the silicon dioxide film and the silicon nitride film are formed in double between the polycrystalline silicon of gate electrode and the aluminum wires, no shortage occurs therebetween.
COPYRIGHT: (C)1980,JPO&Japio
JP13218978A 1978-10-27 1978-10-27 Semiconductor integrated circuit device and method of fabricating the same Pending JPS5559774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13218978A JPS5559774A (en) 1978-10-27 1978-10-27 Semiconductor integrated circuit device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13218978A JPS5559774A (en) 1978-10-27 1978-10-27 Semiconductor integrated circuit device and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS5559774A true JPS5559774A (en) 1980-05-06

Family

ID=15075468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13218978A Pending JPS5559774A (en) 1978-10-27 1978-10-27 Semiconductor integrated circuit device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS5559774A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226929A (en) * 1985-03-29 1986-10-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Formation of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226929A (en) * 1985-03-29 1986-10-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Formation of semiconductor device

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