JPS5558370A - Electrode for sputtering target - Google Patents

Electrode for sputtering target

Info

Publication number
JPS5558370A
JPS5558370A JP12929578A JP12929578A JPS5558370A JP S5558370 A JPS5558370 A JP S5558370A JP 12929578 A JP12929578 A JP 12929578A JP 12929578 A JP12929578 A JP 12929578A JP S5558370 A JPS5558370 A JP S5558370A
Authority
JP
Japan
Prior art keywords
block
electrode
composition ratio
material composition
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12929578A
Other languages
Japanese (ja)
Other versions
JPS5835261B2 (en
Inventor
Yuji Togami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Broadcasting Corp
Original Assignee
Nippon Hoso Kyokai NHK
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Hoso Kyokai NHK, Japan Broadcasting Corp filed Critical Nippon Hoso Kyokai NHK
Priority to JP12929578A priority Critical patent/JPS5835261B2/en
Publication of JPS5558370A publication Critical patent/JPS5558370A/en
Publication of JPS5835261B2 publication Critical patent/JPS5835261B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To enable to manufacture the film of a large surface area having a uniform distribution of material composition ratio without requiring homogeneous alloy target of a large surface area, by providing plural electrode blocks arranging sputtering target in the plane surface neighboring each other and filling the gap of blocks by shielding electrode nearly. CONSTITUTION:The target block 1 larger than the electrode block 3, is arranged on the tip face of each block 3. Electric potential nearly the same to that of the anode arranged the substrate, is given to the shielding electrode 4 filling the gap of the block 3. Also, constructing material of the electrode is not discharged by the block 1 because the cathode block 3 is made so as to be hidden behind each block 1 always seeing from the anode side. Besides, material composition ratio of sputtering thin film, is accurately controlled by arranging closely combining the block 1 having different material composition ratio suitably and uniformity of the film is able to be heighten.
JP12929578A 1978-10-20 1978-10-20 Electrodes for sputtering targets Expired JPS5835261B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12929578A JPS5835261B2 (en) 1978-10-20 1978-10-20 Electrodes for sputtering targets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12929578A JPS5835261B2 (en) 1978-10-20 1978-10-20 Electrodes for sputtering targets

Publications (2)

Publication Number Publication Date
JPS5558370A true JPS5558370A (en) 1980-05-01
JPS5835261B2 JPS5835261B2 (en) 1983-08-01

Family

ID=15006029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12929578A Expired JPS5835261B2 (en) 1978-10-20 1978-10-20 Electrodes for sputtering targets

Country Status (1)

Country Link
JP (1) JPS5835261B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116377A (en) * 1982-12-24 1984-07-05 Nippon Telegr & Teleph Corp <Ntt> Sputtering device
JPS6155811A (en) * 1984-08-27 1986-03-20 株式会社日立製作所 Sputtering target for forming transparent conductive film
JPS6297154A (en) * 1985-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Production of photomagnetic recording medium
KR100531991B1 (en) * 1996-10-21 2006-01-27 가부시키가이샤 아루박 Sputtering device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116377A (en) * 1982-12-24 1984-07-05 Nippon Telegr & Teleph Corp <Ntt> Sputtering device
JPS6155811A (en) * 1984-08-27 1986-03-20 株式会社日立製作所 Sputtering target for forming transparent conductive film
JPH058532B2 (en) * 1984-08-27 1993-02-02 Hitachi Ltd
JPS6297154A (en) * 1985-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Production of photomagnetic recording medium
KR100531991B1 (en) * 1996-10-21 2006-01-27 가부시키가이샤 아루박 Sputtering device

Also Published As

Publication number Publication date
JPS5835261B2 (en) 1983-08-01

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