JPS5555638A - Semiconductor optical pulse reproducing and relay unit - Google Patents

Semiconductor optical pulse reproducing and relay unit

Info

Publication number
JPS5555638A
JPS5555638A JP12780878A JP12780878A JPS5555638A JP S5555638 A JPS5555638 A JP S5555638A JP 12780878 A JP12780878 A JP 12780878A JP 12780878 A JP12780878 A JP 12780878A JP S5555638 A JPS5555638 A JP S5555638A
Authority
JP
Japan
Prior art keywords
oscillation
input
region
pulse
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12780878A
Other languages
Japanese (ja)
Inventor
Yukio Nakagome
Kitsutaro Amano
Akiya Yamamoto
Shigeyuki Akiba
Kazuo Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP12780878A priority Critical patent/JPS5555638A/en
Publication of JPS5555638A publication Critical patent/JPS5555638A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/29—Repeaters
    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To reproduce and relay optical pulse, by oscillation through optical signal amplified and injected to the saturable absorbing area and stopping the oscillation only for the current generation period in synchronizing with the clock pulse CP fed to the amplified area after the duration of oscillation. CONSTITUTION:The optical amplifying section 15 is provided separately other than the amplifying region 6 near the saturable absorption region 7 to amplify the input optical signal 23 up to the photo intensity PA in the resonator. The optical amplifying section 15 is electrically isolated with other region with the groove 3 and power application is made from the lead 18 via the electrode 19 until the input light reaches the intensity PA. The reflection prevention film 22 is evaporated on the opposing surface 21 of the input end surface 20 of the amplifying section 15. When the input light 23 is in excess of the intensity PA, oscillation is made by taking the end surface 1 as a resonator and output light 24 is ibtained. The output light 41 obtained from the end surface 21 is fed to photo diode to pick up the timing component, and the drive current pulse is formed based on it and the input signal is picked up for the timing component by the supply of the pulse from the lead 4 to the amplifying region.
JP12780878A 1978-10-19 1978-10-19 Semiconductor optical pulse reproducing and relay unit Pending JPS5555638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12780878A JPS5555638A (en) 1978-10-19 1978-10-19 Semiconductor optical pulse reproducing and relay unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12780878A JPS5555638A (en) 1978-10-19 1978-10-19 Semiconductor optical pulse reproducing and relay unit

Publications (1)

Publication Number Publication Date
JPS5555638A true JPS5555638A (en) 1980-04-23

Family

ID=14969177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12780878A Pending JPS5555638A (en) 1978-10-19 1978-10-19 Semiconductor optical pulse reproducing and relay unit

Country Status (1)

Country Link
JP (1) JPS5555638A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179282A (en) * 1984-09-26 1986-04-22 Nec Corp Composite type bistable semiconductor laser
JPS61201222A (en) * 1985-03-04 1986-09-05 Hitachi Ltd Light pulse amplifying and shaping device
US4751986A (en) * 1984-10-18 1988-06-21 Yokogawa Medical Systems, Limited Rotor rotating angle limiter
JPS647588A (en) * 1987-06-29 1989-01-11 Nec Corp Light amplifier
JPH01235393A (en) * 1988-03-16 1989-09-20 Nippon Telegr & Teleph Corp <Ntt> Wavelength changing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179282A (en) * 1984-09-26 1986-04-22 Nec Corp Composite type bistable semiconductor laser
US4751986A (en) * 1984-10-18 1988-06-21 Yokogawa Medical Systems, Limited Rotor rotating angle limiter
JPS61201222A (en) * 1985-03-04 1986-09-05 Hitachi Ltd Light pulse amplifying and shaping device
JPS647588A (en) * 1987-06-29 1989-01-11 Nec Corp Light amplifier
JPH01235393A (en) * 1988-03-16 1989-09-20 Nippon Telegr & Teleph Corp <Ntt> Wavelength changing device

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