JPS5552219A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS5552219A
JPS5552219A JP12591678A JP12591678A JPS5552219A JP S5552219 A JPS5552219 A JP S5552219A JP 12591678 A JP12591678 A JP 12591678A JP 12591678 A JP12591678 A JP 12591678A JP S5552219 A JPS5552219 A JP S5552219A
Authority
JP
Japan
Prior art keywords
layer
type
resistance
base plate
continuously
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12591678A
Other languages
Japanese (ja)
Inventor
Kenya Nakai
Tanji Okawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12591678A priority Critical patent/JPS5552219A/en
Publication of JPS5552219A publication Critical patent/JPS5552219A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve interfacial characteristics of an active layer by making epitaxial growth of a buffer layer, a No.1 electric conductive type thin-and-low-comparative-resistance semiconductor layer and a No.2 electric conductive type semiconductor layer, continuously, on a high-resistance crystal base plate.
CONSTITUTION: A buffer layer 2 having a comparative resistance of 1014 Ωcm and a thickness of 5μ is formed on a Cr dope semi-insulating GaAs base plate 1 by introduction of Fe and an epitaxial growth, and a p-type layer 3 having a carrier concentration of 5×1015cm-3 and a thickness of 0.3μ is made to grow continuously on this buffer layer by switching only impurity into Zn, etc. Fe doping is to be completed during formation of the p-type layer and it is not extended to a next n-type layer. And since the p-type layer is thin, it becomes an adequate high-resistance layer, and leak current can be prevented. And then, an n-type active layer 4 having a carrier concentration of 1.5×1017cm-3 is to continuously grow. There is very little influence of the p-type impurity onto the active layer. This is also applicable to an insulator having a base plate of saphire, etc.
COPYRIGHT: (C)1980,JPO&Japio
JP12591678A 1978-10-13 1978-10-13 Semiconductor wafer Pending JPS5552219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12591678A JPS5552219A (en) 1978-10-13 1978-10-13 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12591678A JPS5552219A (en) 1978-10-13 1978-10-13 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5552219A true JPS5552219A (en) 1980-04-16

Family

ID=14922095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12591678A Pending JPS5552219A (en) 1978-10-13 1978-10-13 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5552219A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5959665U (en) * 1982-10-12 1984-04-18 ナイルス部品株式会社 cigarette lighter
JPS62219590A (en) * 1986-03-19 1987-09-26 Nec Corp Integrated element of photo semiconductor and its manufacture
KR100408324B1 (en) * 1998-03-25 2003-12-06 랜디 엘. 쉬마부쿠로 Ultra-high resolution liquid crystal display on silicon-on-sapphire

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5959665U (en) * 1982-10-12 1984-04-18 ナイルス部品株式会社 cigarette lighter
JPS62219590A (en) * 1986-03-19 1987-09-26 Nec Corp Integrated element of photo semiconductor and its manufacture
KR100408324B1 (en) * 1998-03-25 2003-12-06 랜디 엘. 쉬마부쿠로 Ultra-high resolution liquid crystal display on silicon-on-sapphire

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