JPS5544735A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5544735A
JPS5544735A JP11816978A JP11816978A JPS5544735A JP S5544735 A JPS5544735 A JP S5544735A JP 11816978 A JP11816978 A JP 11816978A JP 11816978 A JP11816978 A JP 11816978A JP S5544735 A JPS5544735 A JP S5544735A
Authority
JP
Japan
Prior art keywords
radiant
laser
laser rays
kicked
phenomenon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11816978A
Other languages
Japanese (ja)
Inventor
Hisao Kumabe
Toshio Tanaka
Saburo Takamiya
Wataru Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11816978A priority Critical patent/JPS5544735A/en
Publication of JPS5544735A publication Critical patent/JPS5544735A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To prevent a "Being kicked" phenomenon of radiant laser rays, by removing a portion corresponding to a passage of the radiant laser rays from each portion corresponding to a laser ray radiant portion.
CONSTITUTION: When distance between an end surface, to which a laser ray radiant portion 3 is formed, of a laser element 1 and an end surface of a heat sink 4a is A, a space between the radiant portion 3 and the first electrode 2 is E, a radiation angle of laser rays emitted to the outside through a groove 7 from the radiant portion 3 is θ and the sum of each thickness of the electrode 2, solder 6 with the low melting point and a metallic layer 5 is E', the depth D of the groove 7 satisfying an expression tan(θ/2)=(D+E+E')/A is set. Thus, a "Being kicked" phenomenon can be prevented because a portion is removed which corresponds to a passage of the laser rays radiated from the radiant portion 3.
COPYRIGHT: (C)1980,JPO&Japio
JP11816978A 1978-09-25 1978-09-25 Semiconductor laser device Pending JPS5544735A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11816978A JPS5544735A (en) 1978-09-25 1978-09-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11816978A JPS5544735A (en) 1978-09-25 1978-09-25 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5544735A true JPS5544735A (en) 1980-03-29

Family

ID=14729816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11816978A Pending JPS5544735A (en) 1978-09-25 1978-09-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5544735A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066493A (en) * 1983-08-23 1985-04-16 シーメンス、アクチエンゲゼルシヤフト Laser diode
JPS611856U (en) * 1984-06-08 1986-01-08 松下電器産業株式会社 optical reader
JPH0468572U (en) * 1990-10-24 1992-06-17
JP2005005511A (en) * 2003-06-12 2005-01-06 Fanuc Ltd Semiconductor laser apparatus
WO2017135099A1 (en) * 2016-02-04 2017-08-10 古河電気工業株式会社 Optical coupling structure between optical fiber and semiconductor laser

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066493A (en) * 1983-08-23 1985-04-16 シーメンス、アクチエンゲゼルシヤフト Laser diode
JPS611856U (en) * 1984-06-08 1986-01-08 松下電器産業株式会社 optical reader
JPH0468572U (en) * 1990-10-24 1992-06-17
JP2005005511A (en) * 2003-06-12 2005-01-06 Fanuc Ltd Semiconductor laser apparatus
WO2017135099A1 (en) * 2016-02-04 2017-08-10 古河電気工業株式会社 Optical coupling structure between optical fiber and semiconductor laser
US10670819B2 (en) 2016-02-04 2020-06-02 Furukawa Electric Co., Ltd. Optical coupling structure between optical fiber and semiconductor laser

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