JPS5543829A - Method of treatment of semiconductor substrate - Google Patents

Method of treatment of semiconductor substrate

Info

Publication number
JPS5543829A
JPS5543829A JP11636578A JP11636578A JPS5543829A JP S5543829 A JPS5543829 A JP S5543829A JP 11636578 A JP11636578 A JP 11636578A JP 11636578 A JP11636578 A JP 11636578A JP S5543829 A JPS5543829 A JP S5543829A
Authority
JP
Japan
Prior art keywords
base board
dicing
stage
drying
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11636578A
Other languages
Japanese (ja)
Inventor
Akinori Tanizaki
Noboru Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11636578A priority Critical patent/JPS5543829A/en
Publication of JPS5543829A publication Critical patent/JPS5543829A/en
Pending legal-status Critical Current

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  • Dicing (AREA)

Abstract

PURPOSE: To eliminate occurrence of defective cracks on a semiconductor base board in manufacturing processes and to improve production recovery rate by conducting a series of treatment operations such as dicing, washing and drying, etc., while keeping the semiconductor base board on a base board table.
CONSTITUTION: A base board table 2 is placed on a stage 1 of a dicing device, a semiconductor base board 3 to be treated is placed on this, a stage 1 is vacuumized, and then, the base board 3 and the base board table 2 are fixed onto the stage 1. By driving a dicing saw, a cut groove 4 is formed on the base board 3. After completion of the dicing operation, the vcuumized condition is removed, the semiconductor base board 3 on the base board table 2 is taken out as they are, and washed by spray of cleaning liquid, and then, dehydrating and drying treatments are carried out by using centrifugal dehydrating and drying device. After these treating operations, the base board 3 is pressed by roller for cracking and shred into pellets.
COPYRIGHT: (C)1980,JPO&Japio
JP11636578A 1978-09-21 1978-09-21 Method of treatment of semiconductor substrate Pending JPS5543829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11636578A JPS5543829A (en) 1978-09-21 1978-09-21 Method of treatment of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11636578A JPS5543829A (en) 1978-09-21 1978-09-21 Method of treatment of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5543829A true JPS5543829A (en) 1980-03-27

Family

ID=14685152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11636578A Pending JPS5543829A (en) 1978-09-21 1978-09-21 Method of treatment of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5543829A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169936A (en) * 1982-03-30 1983-10-06 Nec Home Electronics Ltd Dicing method
JPH04186157A (en) * 1990-11-21 1992-07-02 Agency Of Ind Science & Technol Mineral separator device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105445A (en) * 1973-02-07 1974-10-05
JPS5252568A (en) * 1975-10-27 1977-04-27 Nec Corp Production of semiconductor element
JPS52129372A (en) * 1976-04-23 1977-10-29 Seiko Epson Corp Pelletizing method for semiconductor wafers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105445A (en) * 1973-02-07 1974-10-05
JPS5252568A (en) * 1975-10-27 1977-04-27 Nec Corp Production of semiconductor element
JPS52129372A (en) * 1976-04-23 1977-10-29 Seiko Epson Corp Pelletizing method for semiconductor wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169936A (en) * 1982-03-30 1983-10-06 Nec Home Electronics Ltd Dicing method
JPH04186157A (en) * 1990-11-21 1992-07-02 Agency Of Ind Science & Technol Mineral separator device

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