JPS5542344A - Mos type dynamic memory unit - Google Patents

Mos type dynamic memory unit

Info

Publication number
JPS5542344A
JPS5542344A JP11508878A JP11508878A JPS5542344A JP S5542344 A JPS5542344 A JP S5542344A JP 11508878 A JP11508878 A JP 11508878A JP 11508878 A JP11508878 A JP 11508878A JP S5542344 A JPS5542344 A JP S5542344A
Authority
JP
Japan
Prior art keywords
sense amplifiers
memory unit
unit
dynamic memory
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11508878A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11508878A priority Critical patent/JPS5542344A/en
Publication of JPS5542344A publication Critical patent/JPS5542344A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

PURPOSE:To miniaturize a unit by miniaturizing memory cells and dummy cells and also to reduce the occupation area on the whole. CONSTITUTION:The 1st sense amplifiers 20, 22, 24, and 26 are arranged away from and opposing to the 2nd sense amplifiers 21, 23 and 25 and bit lines 27, 28, 32, and 33 connected to the 1st sense amplifiers and extending to certain positions of the 2nd sense amplifiers are laid at intervals in parallel to bit lines 29, 30, 31, and 34 connected to the 2nd sense amplifiers and extending to certain positions of the 1st sense amplifiers. Through the arrangement like this, memory cells 40-51, and dummy cells 53-60 are miniaturized, even if sense amplifiers 20-26 are relatively large, to integrate highly a memory unit in a word-line direction which affects greately the degree of the integration, thereby miniaturizing the unit.
JP11508878A 1978-09-21 1978-09-21 Mos type dynamic memory unit Pending JPS5542344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11508878A JPS5542344A (en) 1978-09-21 1978-09-21 Mos type dynamic memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11508878A JPS5542344A (en) 1978-09-21 1978-09-21 Mos type dynamic memory unit

Publications (1)

Publication Number Publication Date
JPS5542344A true JPS5542344A (en) 1980-03-25

Family

ID=14653891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11508878A Pending JPS5542344A (en) 1978-09-21 1978-09-21 Mos type dynamic memory unit

Country Status (1)

Country Link
JP (1) JPS5542344A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208691A (en) * 1981-06-15 1982-12-21 Mitsubishi Electric Corp Semiconductor memory
JPS5873092A (en) * 1981-10-26 1983-05-02 Hitachi Ltd Semiconductor storage device
JPS60167193A (en) * 1984-02-09 1985-08-30 Fujitsu Ltd Semiconductor storage device
JPS60173793A (en) * 1984-02-17 1985-09-07 Fujitsu Ltd Semiconductor storage device
EP0155521A2 (en) * 1979-12-13 1985-09-25 Fujitsu Limited A semiconductor memory device
JPS60258796A (en) * 1984-06-04 1985-12-20 Sharp Corp Dynamic type semiconductor memory
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
JPS61224195A (en) * 1985-03-29 1986-10-04 Toshiba Corp Dynamic type semiconductor memory device
JPS6346696A (en) * 1986-04-24 1988-02-27 Matsushita Electric Ind Co Ltd Semiconductor memory device
JPS63168698U (en) * 1987-04-23 1988-11-02
US5014241A (en) * 1988-05-12 1991-05-07 Mitsubishi Denki Kabushiki Kaisha Dynamic semiconductor memory device having reduced soft error rate
US5323340A (en) * 1990-01-26 1994-06-21 Kabushiki Kaisha Toshiba Semiconductor integrated circuit

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0155521A2 (en) * 1979-12-13 1985-09-25 Fujitsu Limited A semiconductor memory device
JPS57208691A (en) * 1981-06-15 1982-12-21 Mitsubishi Electric Corp Semiconductor memory
JPS5873092A (en) * 1981-10-26 1983-05-02 Hitachi Ltd Semiconductor storage device
JPH0454316B2 (en) * 1984-02-09 1992-08-31 Fujitsu Ltd
JPS60167193A (en) * 1984-02-09 1985-08-30 Fujitsu Ltd Semiconductor storage device
JPS60173793A (en) * 1984-02-17 1985-09-07 Fujitsu Ltd Semiconductor storage device
JPH0514997B2 (en) * 1984-02-17 1993-02-26 Fujitsu Ltd
JPS60258796A (en) * 1984-06-04 1985-12-20 Sharp Corp Dynamic type semiconductor memory
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
JPS61224195A (en) * 1985-03-29 1986-10-04 Toshiba Corp Dynamic type semiconductor memory device
JPH0437514B2 (en) * 1986-04-24 1992-06-19 Matsushita Electric Ind Co Ltd
JPS6346696A (en) * 1986-04-24 1988-02-27 Matsushita Electric Ind Co Ltd Semiconductor memory device
JPS63168698U (en) * 1987-04-23 1988-11-02
US5014241A (en) * 1988-05-12 1991-05-07 Mitsubishi Denki Kabushiki Kaisha Dynamic semiconductor memory device having reduced soft error rate
US5323340A (en) * 1990-01-26 1994-06-21 Kabushiki Kaisha Toshiba Semiconductor integrated circuit

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