JPS5539411A - Reference voltage generator - Google Patents

Reference voltage generator

Info

Publication number
JPS5539411A
JPS5539411A JP11172278A JP11172278A JPS5539411A JP S5539411 A JPS5539411 A JP S5539411A JP 11172278 A JP11172278 A JP 11172278A JP 11172278 A JP11172278 A JP 11172278A JP S5539411 A JPS5539411 A JP S5539411A
Authority
JP
Japan
Prior art keywords
layer
film
type
reference voltage
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11172278A
Other languages
Japanese (ja)
Other versions
JPS645327B2 (en
Inventor
Osamu Yamashiro
Kanji Yo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11172278A priority Critical patent/JPS5539411A/en
Priority to CH1621/79A priority patent/CH657712A5/en
Priority to IT20368/79A priority patent/IT1111987B/en
Priority to DE2954543A priority patent/DE2954543C2/de
Priority to FR7904226A priority patent/FR2447036B1/en
Priority to CA000321955A priority patent/CA1149081A/en
Priority to NL7901335A priority patent/NL7901335A/en
Priority to DE19792906527 priority patent/DE2906527A1/en
Priority to GB8119560A priority patent/GB2081015B/en
Priority to GB8119561A priority patent/GB2100540B/en
Priority to GB8119562A priority patent/GB2081458B/en
Priority to GB7907817A priority patent/GB2016801B/en
Priority to GB8119559A priority patent/GB2081014B/en
Publication of JPS5539411A publication Critical patent/JPS5539411A/en
Priority to CA000395812A priority patent/CA1146223A/en
Priority to CA000395810A priority patent/CA1154880A/en
Priority to CA000395813A priority patent/CA1143010A/en
Priority to CA000395811A priority patent/CA1145063A/en
Priority to US06/484,263 priority patent/US4553098A/en
Priority to HK80/84A priority patent/HK8084A/en
Priority to SG41584A priority patent/SG41584G/en
Priority to SG41684A priority patent/SG41684G/en
Priority to SG417/84A priority patent/SG41784G/en
Priority to MY1984375A priority patent/MY8400375A/en
Priority to CH1928/85A priority patent/CH672391B5/en
Priority to HK364/85A priority patent/HK36485A/en
Priority to HK363/85A priority patent/HK36385A/en
Priority to HK351/85A priority patent/HK35185A/en
Priority to MY672/85A priority patent/MY8500672A/en
Priority to MY658/85A priority patent/MY8500658A/en
Priority to MY671/85A priority patent/MY8500671A/en
Priority to US07/004,307 priority patent/US5159260A/en
Publication of JPS645327B2 publication Critical patent/JPS645327B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H03F3/45748—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using a feedback circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0233—Bistable circuits
    • H03K3/02337—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE:To obtain an electronic circuit to be used for the reference voltage generator and the like which features the formation of the integrated circuit to reduce the dispersion in terms of manufacture. CONSTITUTION:Thick SiO2-layer 2 is formed on the main surface of N-type Si substrate 1, and the P-type inpurity is introduced to the substrate through the opening part of layer 2 to inform P-type semiconductor well 3. Film 2 is removed paratially at the area where the MOSFET is to be formed to form there gate oxide film 4. Furthermore, the poly Si-layer is formed partially on film 4 to be used as the mask for removal of film 4. Thus the substrate surface is exposed. After removal of photo resists 8, similar layer 9 is formed. And the N-type inpuriry is injected in a high density through the exposed part of layer 9 to form N<+> poly Si-layer 10 and N<+> semiconductor region 11. Here Q3 and Q4 are the normal P(N) channel MOSFET's, and Q1 and Q2 are the P<+>(N<+>) gate MOSFET's for generation of the reference voltage. In such way, the desired circuit can be obtained.
JP11172278A 1978-03-08 1978-09-13 Reference voltage generator Granted JPS5539411A (en)

Priority Applications (31)

Application Number Priority Date Filing Date Title
JP11172278A JPS5539411A (en) 1978-09-13 1978-09-13 Reference voltage generator
CH1621/79A CH657712A5 (en) 1978-03-08 1979-02-19 REFERENCE VOLTAGE GENERATOR.
IT20368/79A IT1111987B (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR DEVICE
DE2954543A DE2954543C2 (en) 1978-03-08 1979-02-20
FR7904226A FR2447036B1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
CA000321955A CA1149081A (en) 1978-03-08 1979-02-20 Reference voltage generator device
NL7901335A NL7901335A (en) 1978-03-08 1979-02-20 GENERATOR FOR A REFERENCE VOLTAGE.
DE19792906527 DE2906527A1 (en) 1978-03-08 1979-02-20 REFERENCE VOLTAGE GENERATOR
GB8119560A GB2081015B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
GB8119561A GB2100540B (en) 1978-03-08 1979-03-06 Reference voltage generators
GB8119562A GB2081458B (en) 1978-03-08 1979-03-06 Voltage comparitors
GB7907817A GB2016801B (en) 1978-03-08 1979-03-06 Referenc voltage generating device
GB8119559A GB2081014B (en) 1978-03-08 1979-03-06 Improvements in the manufacture of semiconductor devices
CA000395810A CA1154880A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395811A CA1145063A (en) 1978-03-08 1982-02-08 Reference voltage generator device
CA000395812A CA1146223A (en) 1978-03-08 1982-02-08 Battery checker
CA000395813A CA1143010A (en) 1978-03-08 1982-02-08 Reference voltage generator device
US06/484,263 US4553098A (en) 1978-04-05 1983-04-12 Battery checker
HK80/84A HK8084A (en) 1978-03-08 1984-01-24 A battery checker
SG41584A SG41584G (en) 1978-03-08 1984-06-04 Reference voltage generating device
SG41684A SG41684G (en) 1978-03-08 1984-06-04 Improvements in the manufacture of a semiconductor device
SG417/84A SG41784G (en) 1978-03-08 1984-06-04 Reference voltage generating device
MY1984375A MY8400375A (en) 1978-03-08 1984-12-31 A battery checker
CH1928/85A CH672391B5 (en) 1978-03-08 1985-02-19 REFERENCE VOLTAGE GENERATOR.
HK351/85A HK35185A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK364/85A HK36485A (en) 1978-03-08 1985-05-09 Reference voltage generating device
HK363/85A HK36385A (en) 1978-03-08 1985-05-09 Improvements in the manufacture of a semiconductor device
MY672/85A MY8500672A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY658/85A MY8500658A (en) 1978-03-08 1985-12-30 Reference voltage generating device
MY671/85A MY8500671A (en) 1978-03-08 1985-12-30 Reference voltage generating device
US07/004,307 US5159260A (en) 1978-03-08 1987-01-07 Reference voltage generator device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11172278A JPS5539411A (en) 1978-09-13 1978-09-13 Reference voltage generator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59222163A Division JPS60243715A (en) 1984-10-24 1984-10-24 Electronic device

Publications (2)

Publication Number Publication Date
JPS5539411A true JPS5539411A (en) 1980-03-19
JPS645327B2 JPS645327B2 (en) 1989-01-30

Family

ID=14568495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11172278A Granted JPS5539411A (en) 1978-03-08 1978-09-13 Reference voltage generator

Country Status (1)

Country Link
JP (1) JPS5539411A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123160A (en) * 1978-12-22 1980-09-22 Centre Electron Horloger Standard voltage source
JPS5760711A (en) * 1980-09-29 1982-04-12 Seiko Epson Corp Differential amplifier
JPS5840633A (en) * 1981-09-04 1983-03-09 Seiko Epson Corp Constant low voltage circuit
JPS58221418A (en) * 1982-06-18 1983-12-23 Hitachi Ltd Device for generating reference voltage
JPS59103103A (en) * 1982-11-22 1984-06-14 ハネウエル・インコ−ポレ−テツド Dead zone control circuit
JP2007133637A (en) * 2005-11-10 2007-05-31 Univ Nihon Reference voltage generation circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149780A (en) * 1975-06-16 1976-12-22 Hewlett Packard Yokogawa Standard voltage generator
JPS5214854A (en) * 1975-07-25 1977-02-04 Nec Corp Standard voltage supplying circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149780A (en) * 1975-06-16 1976-12-22 Hewlett Packard Yokogawa Standard voltage generator
JPS5214854A (en) * 1975-07-25 1977-02-04 Nec Corp Standard voltage supplying circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123160A (en) * 1978-12-22 1980-09-22 Centre Electron Horloger Standard voltage source
JPS5760711A (en) * 1980-09-29 1982-04-12 Seiko Epson Corp Differential amplifier
JPH0143484B2 (en) * 1980-09-29 1989-09-21 Seiko Epson Corp
JPS5840633A (en) * 1981-09-04 1983-03-09 Seiko Epson Corp Constant low voltage circuit
JPS58221418A (en) * 1982-06-18 1983-12-23 Hitachi Ltd Device for generating reference voltage
JPS59103103A (en) * 1982-11-22 1984-06-14 ハネウエル・インコ−ポレ−テツド Dead zone control circuit
JP2007133637A (en) * 2005-11-10 2007-05-31 Univ Nihon Reference voltage generation circuit

Also Published As

Publication number Publication date
JPS645327B2 (en) 1989-01-30

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