JPS5538039A - Device for liquid-phase growth of semiconductor - Google Patents
Device for liquid-phase growth of semiconductorInfo
- Publication number
- JPS5538039A JPS5538039A JP11098578A JP11098578A JPS5538039A JP S5538039 A JPS5538039 A JP S5538039A JP 11098578 A JP11098578 A JP 11098578A JP 11098578 A JP11098578 A JP 11098578A JP S5538039 A JPS5538039 A JP S5538039A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- base
- melted
- housing part
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To provide a device in which deterioration due to oxidation is minimized, by using quartz as the material of the part of the container which comes in contact with melted semiconductor liquid in a device to grow compound semiconductor in liquid phase, and using sapphire as the material for base supporting members.
CONSTITUTION: Melted liquid tank 5, made of quartz, is placed on base-plate housing part 1, made of carbon, whose inner surface is protected by quartz. Sliding plate 9 is provided between the bottom part of melted liquid tank 5 and base-plate housing part 1 so as to maintain airlightness. At the time of starting liquid-phase growing, by moving sliding plate 9, hole 7 and hole 10 are fitted together, and, melted semiconductor liquid which is contained in melted liquid tank 5 is drawn into base-plate housing part 1. Oxidation-resisting and heat-conducting material, such as sapphire, is used as the material for base-plate supporting member 3 inside base-plate housing part 1. Since no carbon is used for the part which comes in contact with melted liquid, the apparatus can be used for many hours, and it is possible to obtain a liquid-phase grown layer of uniform quality.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11098578A JPS5538039A (en) | 1978-09-09 | 1978-09-09 | Device for liquid-phase growth of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11098578A JPS5538039A (en) | 1978-09-09 | 1978-09-09 | Device for liquid-phase growth of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5538039A true JPS5538039A (en) | 1980-03-17 |
Family
ID=14549472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11098578A Pending JPS5538039A (en) | 1978-09-09 | 1978-09-09 | Device for liquid-phase growth of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5538039A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58176965U (en) * | 1982-05-18 | 1983-11-26 | トヨタ自動車株式会社 | Electrodeposition coating equipment |
-
1978
- 1978-09-09 JP JP11098578A patent/JPS5538039A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58176965U (en) * | 1982-05-18 | 1983-11-26 | トヨタ自動車株式会社 | Electrodeposition coating equipment |
JPS621244Y2 (en) * | 1982-05-18 | 1987-01-13 |
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