JPS5381487A - Method and apparatus for liquid phase epitaxial growth - Google Patents
Method and apparatus for liquid phase epitaxial growthInfo
- Publication number
- JPS5381487A JPS5381487A JP15991576A JP15991576A JPS5381487A JP S5381487 A JPS5381487 A JP S5381487A JP 15991576 A JP15991576 A JP 15991576A JP 15991576 A JP15991576 A JP 15991576A JP S5381487 A JPS5381487 A JP S5381487A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- epitaxial growth
- phase epitaxial
- solution
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To effectively carry out wholesome crystal growth, by maintaining the condition of contacting liquid for crystal growth with the growth face of substrate always and dropping the temperature of solution, rotating the solution and substrate, so as the solution to be placed alternately upper and lower situation against the substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15991576A JPS5381487A (en) | 1976-12-27 | 1976-12-27 | Method and apparatus for liquid phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15991576A JPS5381487A (en) | 1976-12-27 | 1976-12-27 | Method and apparatus for liquid phase epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5381487A true JPS5381487A (en) | 1978-07-18 |
Family
ID=15703924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15991576A Pending JPS5381487A (en) | 1976-12-27 | 1976-12-27 | Method and apparatus for liquid phase epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5381487A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5888198A (en) * | 1981-11-19 | 1983-05-26 | Sanyo Electric Co Ltd | Growth of liquid phase |
-
1976
- 1976-12-27 JP JP15991576A patent/JPS5381487A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5888198A (en) * | 1981-11-19 | 1983-05-26 | Sanyo Electric Co Ltd | Growth of liquid phase |
JPH0240639B2 (en) * | 1981-11-19 | 1990-09-12 | Sanyo Electric Co |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51111476A (en) | Method of liquid phase epitaxial crystal growth | |
JPS5381487A (en) | Method and apparatus for liquid phase epitaxial growth | |
JPS5286059A (en) | Process for production and apparatus used for process of semiconductor device | |
JPS547861A (en) | Liquid phase epitaxial growth method | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS52134872A (en) | Method and apparatus for gas/liquid contact and crystallization | |
JPS5228258A (en) | Method for growth of crystals from liquid phase | |
JPS52114269A (en) | Selective liquid growing method | |
JPS52115784A (en) | Liquid phase epitaxial growth | |
JPS52135264A (en) | Liquid phase epitaxial growth method | |
JPS53147684A (en) | Method of and apparatus for liquid phase epitaxial growth | |
JPS5261958A (en) | Method and device for liquid phase crystal crowth | |
JPS5337184A (en) | Epitaxially growing method in liquid phase | |
JPS52116071A (en) | Process for liquid phase epitaxial growth | |
JPS5270759A (en) | Liquid phase growth equipment | |
JPS51126037A (en) | Semiconductor crystal growth method | |
JPS5424576A (en) | Liquid phase epitaxial growing unit and its method | |
JPS5555521A (en) | Method of epitaxial growth at liquid phase | |
JPS52111473A (en) | Ribbon crystal growth method | |
JPS5231665A (en) | Growing method of semiconductor crystal | |
JPS51114383A (en) | Liquid phase epitaxial crystal growth | |
JPS53147685A (en) | Crystal growth method and apparatus for same | |
JPS52109866A (en) | Liquid epitaxial growing method | |
JPS5388569A (en) | Liquid phase epitaxial growth apparatus | |
JPS52103952A (en) | Liquid phase epitaxial crowth method of semiconductor crystal |