JPS553639A - Manufacturing semiconductor substrate - Google Patents
Manufacturing semiconductor substrateInfo
- Publication number
- JPS553639A JPS553639A JP7533078A JP7533078A JPS553639A JP S553639 A JPS553639 A JP S553639A JP 7533078 A JP7533078 A JP 7533078A JP 7533078 A JP7533078 A JP 7533078A JP S553639 A JPS553639 A JP S553639A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystal
- layer
- plane
- laminated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a dielectric-isolator separated substrate which is in parallel with a single-crystal plane and has less warning in the succeeding heat treatment, by grinding out a final polycrystal layer in parallel with the single-crystal plane, and then laminating an oxidized layer and a polycrystal film on the removed plane again.
CONSTITUTION: An oxidized film 2 is formed on a single-crystal Si substrate 1 having grooves 1', then polycrystal layer 3 is formed. Oxidized films and polycrystal layers are alternately formed thereafter, and a laminated polycrystal substrate 5 is formed. In this case a final polycrystal layer 4 is laminated so that it is thicker than the dispersion d of the thickness between the oxidized film beneath the final layer and a sigle-crystal plane 6 and 1/40 of total thickness of polycrystal layer y. Then, the final polycrystal layer 4 is ground out along the A-A' plane in parallel with the single-crystal plane 6. An oxidized film 12 is formed on a polycrystal plane 7, and a polycrystal layer 13 is laminated in such a way it is smaller than 1/40 of total thickness of laminated layer y'. Since the thickness of the layer 13 is less than 1/40 of the total laminated layers, the unevenness of the thickness is negligible. A dielectric-insulator separated substrate is obtained by removing the B-B' portion of the substrate 11 with reference to the most external polycrystal plane 15.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7533078A JPS553639A (en) | 1978-06-23 | 1978-06-23 | Manufacturing semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7533078A JPS553639A (en) | 1978-06-23 | 1978-06-23 | Manufacturing semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS553639A true JPS553639A (en) | 1980-01-11 |
Family
ID=13573131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7533078A Pending JPS553639A (en) | 1978-06-23 | 1978-06-23 | Manufacturing semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS553639A (en) |
-
1978
- 1978-06-23 JP JP7533078A patent/JPS553639A/en active Pending
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