JPS5532291A - Magnetic bubble element - Google Patents

Magnetic bubble element

Info

Publication number
JPS5532291A
JPS5532291A JP10598078A JP10598078A JPS5532291A JP S5532291 A JPS5532291 A JP S5532291A JP 10598078 A JP10598078 A JP 10598078A JP 10598078 A JP10598078 A JP 10598078A JP S5532291 A JPS5532291 A JP S5532291A
Authority
JP
Japan
Prior art keywords
bubble
film thickness
margin
transfer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10598078A
Other languages
Japanese (ja)
Other versions
JPS6048069B2 (en
Inventor
Naotake Orihara
Seiichi Iwasa
Takeyasu Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10598078A priority Critical patent/JPS6048069B2/en
Publication of JPS5532291A publication Critical patent/JPS5532291A/en
Publication of JPS6048069B2 publication Critical patent/JPS6048069B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To extend the overall operation margin of element, by avoiding the difference between the bias margin of the transfer path and the margin for the bubble extension section, through specifying the film thickness of magnetic bubble material.
CONSTITUTION: The magnetic garnet film 2 is grown on the Gd.Ga.Garnet single crystal substrate 1 with liquid phase epitaxial method, and on it, the spacer layer such as SiO2 is formed. For the part requiring the conductor for bubble control such as a divider, the conductor pattern 4 is formed on the layer 3 and the permalloy pattern 6 is formed after providing the insulation layer 5 such as SiO2. Further, a number of transfer permalloy patterns 7 are arranged to form the transfer path. In this case, the film thickness T of the extension part of the bubble is formed thicker, such as the bubble divider, to the film thickness t of the film 2 of the transfer part.
COPYRIGHT: (C)1980,JPO&Japio
JP10598078A 1978-08-30 1978-08-30 magnetic bubble element Expired JPS6048069B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10598078A JPS6048069B2 (en) 1978-08-30 1978-08-30 magnetic bubble element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10598078A JPS6048069B2 (en) 1978-08-30 1978-08-30 magnetic bubble element

Publications (2)

Publication Number Publication Date
JPS5532291A true JPS5532291A (en) 1980-03-06
JPS6048069B2 JPS6048069B2 (en) 1985-10-25

Family

ID=14421888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10598078A Expired JPS6048069B2 (en) 1978-08-30 1978-08-30 magnetic bubble element

Country Status (1)

Country Link
JP (1) JPS6048069B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5794980A (en) * 1980-12-02 1982-06-12 Nec Corp Magnetic bubble memory element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5794980A (en) * 1980-12-02 1982-06-12 Nec Corp Magnetic bubble memory element
JPS6346916B2 (en) * 1980-12-02 1988-09-19 Nippon Electric Co

Also Published As

Publication number Publication date
JPS6048069B2 (en) 1985-10-25

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