JPS5527835A - Vapor phase crystal growing device - Google Patents
Vapor phase crystal growing deviceInfo
- Publication number
- JPS5527835A JPS5527835A JP9889178A JP9889178A JPS5527835A JP S5527835 A JPS5527835 A JP S5527835A JP 9889178 A JP9889178 A JP 9889178A JP 9889178 A JP9889178 A JP 9889178A JP S5527835 A JPS5527835 A JP S5527835A
- Authority
- JP
- Japan
- Prior art keywords
- plates
- gas
- contg
- reacts
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a grown crystal layer of uniform thickness and impurity concn. without requiring a rotating mechanism by setting substrate support plates on the opposite sides of a horizontal type reaction tube with the central axis of the reactor in-between while narrowing the space between the plates from the upper stream of gas to the lower stream.
CONSTITUTION: Substrate support plates 32a. 32b of U-shaped sectional support 32 attached to the tip of support rod 31 widen right and left at an angle of about 8° on the basis of perpendicularity, and the inside of bottom plate 34 is gradually narrowed from the upper stream end of 40mm to the lower stream end of 20mm at an inclination angle of about 5° to the center line. Crystal growing substrates 5 are supported by plates 33a, 33b while leaning against the inner slopes of the plates. AsCl3-contg. H2 gas is introduced from inlet 22 of horizontal type reaction tube 21 in which substrate holder 26 holding plates 33a, 33b is placed. In tube 21 the gas reacts with Ga 24, and H2 gas contg. As and GaCl formed is uniformly mixed in mixer 25, reaches holder 26, and reacts on substrates 5, growing GaAs.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9889178A JPS5527835A (en) | 1978-08-14 | 1978-08-14 | Vapor phase crystal growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9889178A JPS5527835A (en) | 1978-08-14 | 1978-08-14 | Vapor phase crystal growing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5527835A true JPS5527835A (en) | 1980-02-28 |
Family
ID=14231749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9889178A Pending JPS5527835A (en) | 1978-08-14 | 1978-08-14 | Vapor phase crystal growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5527835A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5722238U (en) * | 1980-07-10 | 1982-02-04 |
-
1978
- 1978-08-14 JP JP9889178A patent/JPS5527835A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5722238U (en) * | 1980-07-10 | 1982-02-04 |
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