JPS5527835A - Vapor phase crystal growing device - Google Patents

Vapor phase crystal growing device

Info

Publication number
JPS5527835A
JPS5527835A JP9889178A JP9889178A JPS5527835A JP S5527835 A JPS5527835 A JP S5527835A JP 9889178 A JP9889178 A JP 9889178A JP 9889178 A JP9889178 A JP 9889178A JP S5527835 A JPS5527835 A JP S5527835A
Authority
JP
Japan
Prior art keywords
plates
gas
contg
reacts
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9889178A
Other languages
Japanese (ja)
Inventor
Takaaki Muneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9889178A priority Critical patent/JPS5527835A/en
Publication of JPS5527835A publication Critical patent/JPS5527835A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a grown crystal layer of uniform thickness and impurity concn. without requiring a rotating mechanism by setting substrate support plates on the opposite sides of a horizontal type reaction tube with the central axis of the reactor in-between while narrowing the space between the plates from the upper stream of gas to the lower stream.
CONSTITUTION: Substrate support plates 32a. 32b of U-shaped sectional support 32 attached to the tip of support rod 31 widen right and left at an angle of about 8° on the basis of perpendicularity, and the inside of bottom plate 34 is gradually narrowed from the upper stream end of 40mm to the lower stream end of 20mm at an inclination angle of about 5° to the center line. Crystal growing substrates 5 are supported by plates 33a, 33b while leaning against the inner slopes of the plates. AsCl3-contg. H2 gas is introduced from inlet 22 of horizontal type reaction tube 21 in which substrate holder 26 holding plates 33a, 33b is placed. In tube 21 the gas reacts with Ga 24, and H2 gas contg. As and GaCl formed is uniformly mixed in mixer 25, reaches holder 26, and reacts on substrates 5, growing GaAs.
COPYRIGHT: (C)1980,JPO&Japio
JP9889178A 1978-08-14 1978-08-14 Vapor phase crystal growing device Pending JPS5527835A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9889178A JPS5527835A (en) 1978-08-14 1978-08-14 Vapor phase crystal growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9889178A JPS5527835A (en) 1978-08-14 1978-08-14 Vapor phase crystal growing device

Publications (1)

Publication Number Publication Date
JPS5527835A true JPS5527835A (en) 1980-02-28

Family

ID=14231749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9889178A Pending JPS5527835A (en) 1978-08-14 1978-08-14 Vapor phase crystal growing device

Country Status (1)

Country Link
JP (1) JPS5527835A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5722238U (en) * 1980-07-10 1982-02-04

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5722238U (en) * 1980-07-10 1982-02-04

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