JPS5527773A - Solid state pickup device - Google Patents

Solid state pickup device

Info

Publication number
JPS5527773A
JPS5527773A JP10109678A JP10109678A JPS5527773A JP S5527773 A JPS5527773 A JP S5527773A JP 10109678 A JP10109678 A JP 10109678A JP 10109678 A JP10109678 A JP 10109678A JP S5527773 A JPS5527773 A JP S5527773A
Authority
JP
Japan
Prior art keywords
film
layer
electrode
low
lessen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10109678A
Other languages
Japanese (ja)
Other versions
JPS6042667B2 (en
Inventor
Takao Chikamura
Kazufumi Ogawa
Tadao Yoneda
Shinji Fujiwara
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP53101096A priority Critical patent/JPS6042667B2/en
Publication of JPS5527773A publication Critical patent/JPS5527773A/en
Publication of JPS6042667B2 publication Critical patent/JPS6042667B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To form the pickup element featuring a high uniformity with the low current by providing the low-melting glass insulator film in case the photoconductive film is formed on the semiconductor substrate on which the charge transfer type or X matrix type circuit element is formed.
CONSTITUTION: The 1st insulator layer 15 made of the low-melting glass insulator film is formed on p-type semiconductor substrate 10 possessing gate oxide film 16 and 1st gate electrode 14 forming the step error part, and the contact window of the area same as or smaller than n+-type region 11 is drilled. After this, the heat treatment is given to lessen all step errors for electrode 14, film 16, the contact part and others. Thus the disconnection is prevented for the metal wiring. Then 1st electrode 17, positive hole blocking layer 19 and photoconductor layer 20 are formed on layer 15 thus formed to lessen the concentration of the electric field to the heterojunction, thus forming a unit of the solid state pickup device featuring a high uniformity with the low current.
COPYRIGHT: (C)1980,JPO&Japio
JP53101096A 1978-08-18 1978-08-18 solid-state imaging device Expired JPS6042667B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53101096A JPS6042667B2 (en) 1978-08-18 1978-08-18 solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53101096A JPS6042667B2 (en) 1978-08-18 1978-08-18 solid-state imaging device

Publications (2)

Publication Number Publication Date
JPS5527773A true JPS5527773A (en) 1980-02-28
JPS6042667B2 JPS6042667B2 (en) 1985-09-24

Family

ID=14291552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53101096A Expired JPS6042667B2 (en) 1978-08-18 1978-08-18 solid-state imaging device

Country Status (1)

Country Link
JP (1) JPS6042667B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150168U (en) * 1986-03-17 1987-09-22
JPH047168U (en) * 1990-05-10 1992-01-22

Also Published As

Publication number Publication date
JPS6042667B2 (en) 1985-09-24

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