JPS56146232A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56146232A
JPS56146232A JP2386680A JP2386680A JPS56146232A JP S56146232 A JPS56146232 A JP S56146232A JP 2386680 A JP2386680 A JP 2386680A JP 2386680 A JP2386680 A JP 2386680A JP S56146232 A JPS56146232 A JP S56146232A
Authority
JP
Japan
Prior art keywords
wirings
regions
substrate
injected
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2386680A
Other languages
Japanese (ja)
Inventor
Masahiro Iiri
Yoshitaka Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2386680A priority Critical patent/JPS56146232A/en
Publication of JPS56146232A publication Critical patent/JPS56146232A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a good electrical contact between a substrate and wirings by a method wherein an exposed impurity region is ion-injected with the same conductive type impurity with an insulating film formed a contact hole as a mask. CONSTITUTION:After a gate electrode 3 comprising a field oxide film 2, n<+> regions 5, 6, a gate oxide film 4 and an As-dopted polycrystalline Si is formed on a p type Si substrate 1, an SiO2 film 7 is formed to make openings 81, 82, 83, and after the As is ion-injected to the regions 5, 6 and 3 through the openings to form n type high density regions 91, 92, 93, Al wirings 10, 11, 12 are formed. Thereby, the low resistance contacts of the semiconductor substrate and the wirings can be contrived without increasing an area of the contact hole and causing a depth fluctuation of the impurity region.
JP2386680A 1980-02-27 1980-02-27 Manufacture of semiconductor device Pending JPS56146232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2386680A JPS56146232A (en) 1980-02-27 1980-02-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2386680A JPS56146232A (en) 1980-02-27 1980-02-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56146232A true JPS56146232A (en) 1981-11-13

Family

ID=12122356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2386680A Pending JPS56146232A (en) 1980-02-27 1980-02-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56146232A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181571A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor device
JPS59200416A (en) * 1983-04-28 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPS607126A (en) * 1983-06-27 1985-01-14 Toshiba Corp Manufacture of semiconductor device
JPS6295869A (en) * 1985-10-22 1987-05-02 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197381A (en) * 1975-02-24 1976-08-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197381A (en) * 1975-02-24 1976-08-26

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181571A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor device
JPS59200416A (en) * 1983-04-28 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPS607126A (en) * 1983-06-27 1985-01-14 Toshiba Corp Manufacture of semiconductor device
JPH0510820B2 (en) * 1983-06-27 1993-02-10 Tokyo Shibaura Electric Co
JPS6295869A (en) * 1985-10-22 1987-05-02 Nec Corp Semiconductor device

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