JPS5519868A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5519868A
JPS5519868A JP9290678A JP9290678A JPS5519868A JP S5519868 A JPS5519868 A JP S5519868A JP 9290678 A JP9290678 A JP 9290678A JP 9290678 A JP9290678 A JP 9290678A JP S5519868 A JPS5519868 A JP S5519868A
Authority
JP
Japan
Prior art keywords
ranges
type
drain
source
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9290678A
Other languages
Japanese (ja)
Inventor
Kazuhiro Shimotori
Yasuharu Nagayama
Isao Okura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9290678A priority Critical patent/JPS5519868A/en
Publication of JPS5519868A publication Critical patent/JPS5519868A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide at the both ends of source and drain ranges the shallow ranges of the same conduction type as said source and drain ranges and the decreasing the contact surfaces of said shallow ranges with the opposite conduction type ranges which surround said source and drain ranges for decreasing the capacity of the coupling of said shallow ranges and thereby raising the operational speed of MIS. IC.
CONSTITUTION: P--type ranges 12 are diffusedly formed at the both end portions of a p--type semiconductor 11, thick field oxidized films 13 are deposited on said ranges 12, and N+-type source range 14a and drain range 14b are diffusedly formed at the surface range surrounded by said films 13 of said substrate 11. N-type ranges 20a and 20b both shallower than said ranges 14a and 14b are newly provided at said ranges 14a and 14b, and the contact surfaces of said ranges 14a and 14b with said range 12 is decreased in width W'. At the same time, the both end portions of the gate electrode 15 buried in said oxidized film 13 are located on said shallower ranges 20a and 20b. Thereby, the contact capacity generated between said ranges 14a and 14b and 12 decreases and the operational speed of MIS.IC having IGFET as component is raised.
COPYRIGHT: (C)1980,JPO&Japio
JP9290678A 1978-07-28 1978-07-28 Semiconductor Pending JPS5519868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9290678A JPS5519868A (en) 1978-07-28 1978-07-28 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9290678A JPS5519868A (en) 1978-07-28 1978-07-28 Semiconductor

Publications (1)

Publication Number Publication Date
JPS5519868A true JPS5519868A (en) 1980-02-12

Family

ID=14067517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9290678A Pending JPS5519868A (en) 1978-07-28 1978-07-28 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5519868A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606565A (en) * 1983-05-20 1985-01-14 マシ−ネンフアブリク・リ−タ−・アクチエンゲゼルシヤフト Cotton treating machine with multipurpose handling mechanismof bobbin

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606565A (en) * 1983-05-20 1985-01-14 マシ−ネンフアブリク・リ−タ−・アクチエンゲゼルシヤフト Cotton treating machine with multipurpose handling mechanismof bobbin

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