JPS5519865A - Semiconductor and manufacture thereof - Google Patents

Semiconductor and manufacture thereof

Info

Publication number
JPS5519865A
JPS5519865A JP9290378A JP9290378A JPS5519865A JP S5519865 A JPS5519865 A JP S5519865A JP 9290378 A JP9290378 A JP 9290378A JP 9290378 A JP9290378 A JP 9290378A JP S5519865 A JPS5519865 A JP S5519865A
Authority
JP
Japan
Prior art keywords
range
drain
gate
source
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9290378A
Other languages
Japanese (ja)
Inventor
Masahiro Yoneda
Koichi Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9290378A priority Critical patent/JPS5519865A/en
Publication of JPS5519865A publication Critical patent/JPS5519865A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increasing the operation speed of static induction transistors, to raise the source range provided under drain range and to reduce the distance between said both ranges. CONSTITUTION:First conductive range 30 such as n-type one for example is formed on a semiconductor substrate 27, and n<-1>-range 22 thereon. p-type range 23 is provided in said range 22 so as to surround the n<+>-range 24 and the portion for serving as channel of said range 22. Further, the range having a lower specific resistance than said range 22 and protrudent into said range 22 is provided in the range directly under said range 24. Thereby, the SIT portion of a static induction transistor is formed of said range 30 as source, the range surrounded by said range 23 of said range 22 as channel, said range 23 as gate and said range 24 as drain. The operation speed of said SIT can be raised without increasing the capacity between drain and gate by reducing the distance between said source range 30 and drain range 24 and the resistance between drain and gate.
JP9290378A 1978-07-28 1978-07-28 Semiconductor and manufacture thereof Pending JPS5519865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9290378A JPS5519865A (en) 1978-07-28 1978-07-28 Semiconductor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9290378A JPS5519865A (en) 1978-07-28 1978-07-28 Semiconductor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5519865A true JPS5519865A (en) 1980-02-12

Family

ID=14067426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9290378A Pending JPS5519865A (en) 1978-07-28 1978-07-28 Semiconductor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5519865A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor

Similar Documents

Publication Publication Date Title
GB1357515A (en) Method for manufacturing an mos integrated circuit
JPS5323577A (en) Complementary type insulated gate effect transistor
JPS645070A (en) Vertical insulated gate field effect transistor
JPS5519865A (en) Semiconductor and manufacture thereof
JPS5691470A (en) Semiconductor
JPS5546555A (en) Semiconductor device
JPS6417476A (en) Mos gate bipolar transistor
JPS6431471A (en) Semiconductor device
JPS5685851A (en) Complementary mos type semiconductor device
JPS5571068A (en) Mos transistor and its manufacturing method
JPS5522887A (en) Mis type field effect semiconductor device
JPS5297683A (en) Semiconductor circuit device
JPS6476768A (en) Semiconductor device and manufacture thereof
JPS54103679A (en) Electrostatic induction type semiconductor logic circuit device
JPS57121280A (en) Field effect transistor
JPS647563A (en) Charge transfer device
JPS57143855A (en) Semiconductor integrated circuit device
JPS56115572A (en) Field effect transistor
JPS5563862A (en) Semiconductor logic circuit
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5745969A (en) Mis type semiconductor integrated circuit device
JPS6481274A (en) Semiconductor device
JPS5491076A (en) Semiconductor device
JPS5214380A (en) Method for production of silicon gate mos transistor
JPS55130138A (en) Semiconductor device and its manufacturing method