JPS55163847A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55163847A JPS55163847A JP7246279A JP7246279A JPS55163847A JP S55163847 A JPS55163847 A JP S55163847A JP 7246279 A JP7246279 A JP 7246279A JP 7246279 A JP7246279 A JP 7246279A JP S55163847 A JPS55163847 A JP S55163847A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- glass
- glass powder
- mount
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011521 glass Substances 0.000 abstract 7
- 239000000843 powder Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To readily conduct a step of forming a glass layer in a method of manufacturing a semiconductor device coated with glass on the surface by adhering glass powder on the surface and then removing an calcining the glass powder layer of a mount. CONSTITUTION:A P-type diffused layer 2 is formed on the surface of an N-type silicon substrate 1, and grooves 3 and mount 4 are formed by mesa etching. Glass powder is adhered onto the entire surface by an electrophoresis to form a glass powder layer 5. The mount portion on the layer 5 is scraped off by a hard bladelike squeegee 6. The substrate is charged into an incinerator and incinerated to form a glass film 7 thereon. Then, electrodes 8, 9 are formed by a plating process, isolated at the bottom of the grooves 3 to form respective element products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7246279A JPS55163847A (en) | 1979-06-08 | 1979-06-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7246279A JPS55163847A (en) | 1979-06-08 | 1979-06-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55163847A true JPS55163847A (en) | 1980-12-20 |
Family
ID=13489986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7246279A Pending JPS55163847A (en) | 1979-06-08 | 1979-06-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55163847A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210110694A (en) * | 2019-02-15 | 2021-09-08 | 산둥 차이쥐 일렉트로닉 테크놀로지 컴퍼니 리미티드 | Glass powder filling equipment into wafers |
-
1979
- 1979-06-08 JP JP7246279A patent/JPS55163847A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210110694A (en) * | 2019-02-15 | 2021-09-08 | 산둥 차이쥐 일렉트로닉 테크놀로지 컴퍼니 리미티드 | Glass powder filling equipment into wafers |
| JP2022517437A (en) * | 2019-02-15 | 2022-03-08 | シャンドン ツァイジュー エレクトロニック テクノロジー カンパニー リミテッド | Equipment for filling wafers with glass powder |
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