JPS551616A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS551616A JPS551616A JP7346678A JP7346678A JPS551616A JP S551616 A JPS551616 A JP S551616A JP 7346678 A JP7346678 A JP 7346678A JP 7346678 A JP7346678 A JP 7346678A JP S551616 A JPS551616 A JP S551616A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- heating element
- memory
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To make it possible to perform write as well as rewrite in a high speed and complete a non-volatile read/wtite memory by providing a heating element around an amorphous memory element. CONSTITUTION:P-type diffusion layer 2 is formed in a part of N conductive-type substrate 1. Substrate protecting insulating film 3 is provided on substrate 1, and semiconductor 5 which should become a memory element is formed on film 3 through heating element 8 and Mo electrode 4 for one contact to amorphous semiconductor 5. Further, Mo electrode 6 is formed on conductor 5 as the other contact to semiconductor 5. Then, Al wiring 7 for the connection between a diode and semiconductor 5 as well as a leading-out wiring of cells to the external and electrodes 9 and 10 for heating element 8 are formed. At a memory write time, heating element 8 is caused to be conductive together with semiconductor 5, and the temperature of semiconductor 5 and parts around it rises simultaneously.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53073466A JPS6047672B2 (en) | 1978-06-16 | 1978-06-16 | semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53073466A JPS6047672B2 (en) | 1978-06-16 | 1978-06-16 | semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS551616A true JPS551616A (en) | 1980-01-08 |
JPS6047672B2 JPS6047672B2 (en) | 1985-10-23 |
Family
ID=13519060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53073466A Expired JPS6047672B2 (en) | 1978-06-16 | 1978-06-16 | semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6047672B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57189393A (en) * | 1981-05-18 | 1982-11-20 | Seiko Epson Corp | Semiconductor storage device |
JPS59168665A (en) * | 1983-03-07 | 1984-09-22 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Semiconductor memory device and method of producing same |
-
1978
- 1978-06-16 JP JP53073466A patent/JPS6047672B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57189393A (en) * | 1981-05-18 | 1982-11-20 | Seiko Epson Corp | Semiconductor storage device |
JPH0127520B2 (en) * | 1981-05-18 | 1989-05-29 | Seiko Epson Corp | |
JPS59168665A (en) * | 1983-03-07 | 1984-09-22 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Semiconductor memory device and method of producing same |
Also Published As
Publication number | Publication date |
---|---|
JPS6047672B2 (en) | 1985-10-23 |
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