JPS55160472A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS55160472A JPS55160472A JP6834679A JP6834679A JPS55160472A JP S55160472 A JPS55160472 A JP S55160472A JP 6834679 A JP6834679 A JP 6834679A JP 6834679 A JP6834679 A JP 6834679A JP S55160472 A JPS55160472 A JP S55160472A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- passage
- weirs
- transfer device
- upstream
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 abstract 2
- 230000000717 retained effect Effects 0.000 abstract 2
- 238000011144 upstream manufacturing Methods 0.000 abstract 2
- 238000005036 potential barrier Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To provide the charge transfer device which has small size and operates at high speed by forming all the widths of charge conducting passages equal to remove the retained charge due to narrow channel effect. CONSTITUTION:The charge guide region 8 forming a potential barrier is formed in the shape in parallel with the gate electrodes 1, 2 formed on the substrate 3. The charge weirs 4, 5 are formed in shape with a curve connected from the interior of the small semicircle having a radius r to the exterior of the large semicircle having a radius R, and the shortest distance between confronting electrodes for defining the charge passage at any two points along the charge transfer direction A of the charge passages being equal at the upstream and the downstream of the charge passage. Even in case that the shortest distance between the confronting charge weirs becomes large at the upstream and the downstream of the charge passage, the retained charge due to narrow channel effect can be removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6834679A JPS55160472A (en) | 1979-05-31 | 1979-05-31 | Charge transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6834679A JPS55160472A (en) | 1979-05-31 | 1979-05-31 | Charge transfer device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55160472A true JPS55160472A (en) | 1980-12-13 |
Family
ID=13371172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6834679A Pending JPS55160472A (en) | 1979-05-31 | 1979-05-31 | Charge transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55160472A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489363A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Solid state image sensing device |
-
1979
- 1979-05-31 JP JP6834679A patent/JPS55160472A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489363A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Solid state image sensing device |
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