JPS55160472A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS55160472A
JPS55160472A JP6834679A JP6834679A JPS55160472A JP S55160472 A JPS55160472 A JP S55160472A JP 6834679 A JP6834679 A JP 6834679A JP 6834679 A JP6834679 A JP 6834679A JP S55160472 A JPS55160472 A JP S55160472A
Authority
JP
Japan
Prior art keywords
charge
passage
weirs
transfer device
upstream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6834679A
Other languages
Japanese (ja)
Inventor
Kunihiro Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6834679A priority Critical patent/JPS55160472A/en
Publication of JPS55160472A publication Critical patent/JPS55160472A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To provide the charge transfer device which has small size and operates at high speed by forming all the widths of charge conducting passages equal to remove the retained charge due to narrow channel effect. CONSTITUTION:The charge guide region 8 forming a potential barrier is formed in the shape in parallel with the gate electrodes 1, 2 formed on the substrate 3. The charge weirs 4, 5 are formed in shape with a curve connected from the interior of the small semicircle having a radius r to the exterior of the large semicircle having a radius R, and the shortest distance between confronting electrodes for defining the charge passage at any two points along the charge transfer direction A of the charge passages being equal at the upstream and the downstream of the charge passage. Even in case that the shortest distance between the confronting charge weirs becomes large at the upstream and the downstream of the charge passage, the retained charge due to narrow channel effect can be removed.
JP6834679A 1979-05-31 1979-05-31 Charge transfer device Pending JPS55160472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6834679A JPS55160472A (en) 1979-05-31 1979-05-31 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6834679A JPS55160472A (en) 1979-05-31 1979-05-31 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS55160472A true JPS55160472A (en) 1980-12-13

Family

ID=13371172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6834679A Pending JPS55160472A (en) 1979-05-31 1979-05-31 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS55160472A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489363A (en) * 1987-09-29 1989-04-03 Toshiba Corp Solid state image sensing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489363A (en) * 1987-09-29 1989-04-03 Toshiba Corp Solid state image sensing device

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