JPS55150226A - Method of correcting pattern - Google Patents

Method of correcting pattern

Info

Publication number
JPS55150226A
JPS55150226A JP5712579A JP5712579A JPS55150226A JP S55150226 A JPS55150226 A JP S55150226A JP 5712579 A JP5712579 A JP 5712579A JP 5712579 A JP5712579 A JP 5712579A JP S55150226 A JPS55150226 A JP S55150226A
Authority
JP
Japan
Prior art keywords
opening
lack fault
thin film
lack
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5712579A
Other languages
Japanese (ja)
Inventor
Susumu Aiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5712579A priority Critical patent/JPS55150226A/en
Publication of JPS55150226A publication Critical patent/JPS55150226A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To enable correction of a pattern in high size accuracy by arranging an opening in the vicinity of a lack fault in opposed manner when the lack fault occurs on a thin film formed as a pattern, forming a thin film at the lack fault portion through the opening and then removing the excessive thin film on the periphery thereof by irradiating laser light thereto. CONSTITUTION:X and Y stages 7 and 9 movable in X and Y directions, respectively are provided in a vacuum container 9, and another vacuum unit 15 having an opening 13 opened at the top between the stages is arranged through the bottom surface of the vacuum container 9. With such a construction a photomask 1 is so placed on the stage 7 that the lack fault portion is disposed downside, the lack fault portion is accurately alligned with the opening 13 by employing a drive bar 10, aluminum is then evaporated by a heater 15 provided in the vacuum unit 15, and the lack fault portion is filled with aluminum film. Thereafter, excessive film produced on the periphery thereof is removed by the laser light irradiated through a dichroic mirror 24 and an objective lens 16 while observing the film through a prism 17 by an eyepiece 18.
JP5712579A 1979-05-11 1979-05-11 Method of correcting pattern Pending JPS55150226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5712579A JPS55150226A (en) 1979-05-11 1979-05-11 Method of correcting pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5712579A JPS55150226A (en) 1979-05-11 1979-05-11 Method of correcting pattern

Publications (1)

Publication Number Publication Date
JPS55150226A true JPS55150226A (en) 1980-11-22

Family

ID=13046832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5712579A Pending JPS55150226A (en) 1979-05-11 1979-05-11 Method of correcting pattern

Country Status (1)

Country Link
JP (1) JPS55150226A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165685A2 (en) * 1984-06-20 1985-12-27 Gould Inc. Laser-based system for the total repair of photomasks
EP0221184A1 (en) * 1984-06-26 1987-05-13 Seiko Instruments Inc. Mask repairing apparatus
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
US4950498A (en) * 1986-02-24 1990-08-21 Seiko Instruments Inc. Process for repairing pattern film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120671A (en) * 1975-04-16 1976-10-22 Fujitsu Ltd Photomask fault processing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120671A (en) * 1975-04-16 1976-10-22 Fujitsu Ltd Photomask fault processing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165685A2 (en) * 1984-06-20 1985-12-27 Gould Inc. Laser-based system for the total repair of photomasks
EP0221184A1 (en) * 1984-06-26 1987-05-13 Seiko Instruments Inc. Mask repairing apparatus
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
US4950498A (en) * 1986-02-24 1990-08-21 Seiko Instruments Inc. Process for repairing pattern film

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