JPS55147362A - Method of testing semiconductor device - Google Patents

Method of testing semiconductor device

Info

Publication number
JPS55147362A
JPS55147362A JP5675179A JP5675179A JPS55147362A JP S55147362 A JPS55147362 A JP S55147362A JP 5675179 A JP5675179 A JP 5675179A JP 5675179 A JP5675179 A JP 5675179A JP S55147362 A JPS55147362 A JP S55147362A
Authority
JP
Japan
Prior art keywords
temperature
measured
characteristic
input voltage
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5675179A
Other languages
Japanese (ja)
Inventor
Shinji Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5675179A priority Critical patent/JPS55147362A/en
Publication of JPS55147362A publication Critical patent/JPS55147362A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To carry out the measurements of the subject device exactly and rapidly by a compact device by measuring the characteristic variation factors due to the temperature fluctuation of the semiconductor having a pn-junction by utilizing the temperature characteristic of the forward voltage of the semiconductor device.
CONSTITUTION: A forward voltage from a forward voltage drop monitor terminal 10 of pn-junction of an IC in a state where an input voltage is not applied to an input terminal 8 is measured, and the measured value is converted in the terms of temperature to obtain an initial IC chip temperature. Simultaneously, the electric characteristic in this initial temperature is measured. Then, the temperature of the IC chip 2 at the time of the application of the input voltage in a state where an input voltage is applied to an input terminal 8 is monitored, and simultaneously the electric characteristic at the time of applying this input voltage is measured. Furthermore, forcibly the ambient temperature of an IC package is changed, and in this state the electric characteristic is measured. Then, the characteristic variation ratio and thermal resistor are calculated from the electric characteristics at respective temperatures.
COPYRIGHT: (C)1980,JPO&Japio
JP5675179A 1979-05-07 1979-05-07 Method of testing semiconductor device Pending JPS55147362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5675179A JPS55147362A (en) 1979-05-07 1979-05-07 Method of testing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5675179A JPS55147362A (en) 1979-05-07 1979-05-07 Method of testing semiconductor device

Publications (1)

Publication Number Publication Date
JPS55147362A true JPS55147362A (en) 1980-11-17

Family

ID=13036218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5675179A Pending JPS55147362A (en) 1979-05-07 1979-05-07 Method of testing semiconductor device

Country Status (1)

Country Link
JP (1) JPS55147362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196479A (en) * 1984-10-18 1986-05-15 Nec Corp Ic measuring device
JPH01241157A (en) * 1988-03-23 1989-09-26 Fujitsu Ltd Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196479A (en) * 1984-10-18 1986-05-15 Nec Corp Ic measuring device
JPH01241157A (en) * 1988-03-23 1989-09-26 Fujitsu Ltd Semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
WO1995027189A1 (en) Resistance measuring circuit, and thermal appliance, electrical thermometer and cold-generating appliance including such a measuring circuit
JPS55147362A (en) Method of testing semiconductor device
JPS56161649A (en) Measuring method of thermal resistance of semiconductor package
JPS5472983A (en) Measuring method for semiconductor element
JPS5571034A (en) Measuring method for resistance distribution of compound semiconductor single crystal
Evans High temperature platinum resistance thermometry
JP2517873B2 (en) Thermoelectric AC / DC converter output voltage measuring device
JPS5244178A (en) Semiconductor integrated circuit device
SU120934A1 (en) Device for measuring high temperatures
SU1129539A1 (en) Device for measuring thermal resistance of radio electronic components
JPS53112058A (en) Semiconductor device and temperature characteristic measuring method of the same
JPS5544931A (en) Temperature characteristics tester
KEVERN et al. Investigation of thermocouples and thermocouple attachment methods[Final Report]
JPS5414683A (en) Measuring circuit for turn-off time
Patel et al. Transient thermal impedance tester for power IC packages
Siegal Laser diode junction temperature measurement alternatives: An overview
JPS54131879A (en) Measuring method for semiconductor device
JPS5660362A (en) Characteristic measuring device
JPS5361977A (en) Constant current load circuit for measuring semiconductor elementcharacteristics
JPS5726452A (en) Testing method for semiconductor device
JPS57201040A (en) Semiconductor device
JPH01123171A (en) Temperature drift tester of semiconductor apparatus
JPS53145576A (en) Measuring method of electrical characteristics of semiconductor wafers and probe card used in said method
JPS564069A (en) Test of semiconductor device
JPS5649559A (en) Semiconductor integrated circuit device