JPS55147362A - Method of testing semiconductor device - Google Patents
Method of testing semiconductor deviceInfo
- Publication number
- JPS55147362A JPS55147362A JP5675179A JP5675179A JPS55147362A JP S55147362 A JPS55147362 A JP S55147362A JP 5675179 A JP5675179 A JP 5675179A JP 5675179 A JP5675179 A JP 5675179A JP S55147362 A JPS55147362 A JP S55147362A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- measured
- characteristic
- input voltage
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To carry out the measurements of the subject device exactly and rapidly by a compact device by measuring the characteristic variation factors due to the temperature fluctuation of the semiconductor having a pn-junction by utilizing the temperature characteristic of the forward voltage of the semiconductor device.
CONSTITUTION: A forward voltage from a forward voltage drop monitor terminal 10 of pn-junction of an IC in a state where an input voltage is not applied to an input terminal 8 is measured, and the measured value is converted in the terms of temperature to obtain an initial IC chip temperature. Simultaneously, the electric characteristic in this initial temperature is measured. Then, the temperature of the IC chip 2 at the time of the application of the input voltage in a state where an input voltage is applied to an input terminal 8 is monitored, and simultaneously the electric characteristic at the time of applying this input voltage is measured. Furthermore, forcibly the ambient temperature of an IC package is changed, and in this state the electric characteristic is measured. Then, the characteristic variation ratio and thermal resistor are calculated from the electric characteristics at respective temperatures.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5675179A JPS55147362A (en) | 1979-05-07 | 1979-05-07 | Method of testing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5675179A JPS55147362A (en) | 1979-05-07 | 1979-05-07 | Method of testing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55147362A true JPS55147362A (en) | 1980-11-17 |
Family
ID=13036218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5675179A Pending JPS55147362A (en) | 1979-05-07 | 1979-05-07 | Method of testing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55147362A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6196479A (en) * | 1984-10-18 | 1986-05-15 | Nec Corp | Ic measuring device |
JPH01241157A (en) * | 1988-03-23 | 1989-09-26 | Fujitsu Ltd | Semiconductor integrated circuit |
-
1979
- 1979-05-07 JP JP5675179A patent/JPS55147362A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6196479A (en) * | 1984-10-18 | 1986-05-15 | Nec Corp | Ic measuring device |
JPH01241157A (en) * | 1988-03-23 | 1989-09-26 | Fujitsu Ltd | Semiconductor integrated circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO1995027189A1 (en) | Resistance measuring circuit, and thermal appliance, electrical thermometer and cold-generating appliance including such a measuring circuit | |
JPS55147362A (en) | Method of testing semiconductor device | |
JPS56161649A (en) | Measuring method of thermal resistance of semiconductor package | |
JPS5472983A (en) | Measuring method for semiconductor element | |
JPS5571034A (en) | Measuring method for resistance distribution of compound semiconductor single crystal | |
Evans | High temperature platinum resistance thermometry | |
JP2517873B2 (en) | Thermoelectric AC / DC converter output voltage measuring device | |
JPS5244178A (en) | Semiconductor integrated circuit device | |
SU120934A1 (en) | Device for measuring high temperatures | |
SU1129539A1 (en) | Device for measuring thermal resistance of radio electronic components | |
JPS53112058A (en) | Semiconductor device and temperature characteristic measuring method of the same | |
JPS5544931A (en) | Temperature characteristics tester | |
KEVERN et al. | Investigation of thermocouples and thermocouple attachment methods[Final Report] | |
JPS5414683A (en) | Measuring circuit for turn-off time | |
Patel et al. | Transient thermal impedance tester for power IC packages | |
Siegal | Laser diode junction temperature measurement alternatives: An overview | |
JPS54131879A (en) | Measuring method for semiconductor device | |
JPS5660362A (en) | Characteristic measuring device | |
JPS5361977A (en) | Constant current load circuit for measuring semiconductor elementcharacteristics | |
JPS5726452A (en) | Testing method for semiconductor device | |
JPS57201040A (en) | Semiconductor device | |
JPH01123171A (en) | Temperature drift tester of semiconductor apparatus | |
JPS53145576A (en) | Measuring method of electrical characteristics of semiconductor wafers and probe card used in said method | |
JPS564069A (en) | Test of semiconductor device | |
JPS5649559A (en) | Semiconductor integrated circuit device |