JPS5514505A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5514505A
JPS5514505A JP8596278A JP8596278A JPS5514505A JP S5514505 A JPS5514505 A JP S5514505A JP 8596278 A JP8596278 A JP 8596278A JP 8596278 A JP8596278 A JP 8596278A JP S5514505 A JPS5514505 A JP S5514505A
Authority
JP
Japan
Prior art keywords
bit lines
current sources
pair
bit
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8596278A
Other languages
Japanese (ja)
Inventor
Toshio Hayashi
Masao Suzuki
Kuniyasu Kawarada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8596278A priority Critical patent/JPS5514505A/en
Publication of JPS5514505A publication Critical patent/JPS5514505A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Landscapes

  • Static Random-Access Memory (AREA)
  • Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)

Abstract

PURPOSE:To make the memory element in high density and to enable higher response, by reducing the number of current sources for readout for the bit line drive circuit, through the detection of a pair of bit lines every column unit to select the current sources. CONSTITUTION:The semiconductor memory element in two dimension arrangement of matrix shape is driven with a pair of bit lines in column unit the word lines in row unit. The potential of a pair of bit lines is detected with the complementary transistors Q7 and Q8 in base connection with the bit lines to make conductive the switching transistors Q9 and Q10 on the bit lines having greater potential, resulting that the bit lines are connected to the current sources. Accordingly, the number of the current sources is reduced to a half in comparison with the provision of the current sources every bit line to cause lower consumption. As a result, the memory unit can be brought into high density and access time can be reduced together with the high response due to the high speed transition of the bit lines to higher and lower levels.
JP8596278A 1978-07-14 1978-07-14 Semiconductor memory unit Pending JPS5514505A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8596278A JPS5514505A (en) 1978-07-14 1978-07-14 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8596278A JPS5514505A (en) 1978-07-14 1978-07-14 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5514505A true JPS5514505A (en) 1980-02-01

Family

ID=13873355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8596278A Pending JPS5514505A (en) 1978-07-14 1978-07-14 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5514505A (en)

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