JPS55141565A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPS55141565A
JPS55141565A JP4674179A JP4674179A JPS55141565A JP S55141565 A JPS55141565 A JP S55141565A JP 4674179 A JP4674179 A JP 4674179A JP 4674179 A JP4674179 A JP 4674179A JP S55141565 A JPS55141565 A JP S55141565A
Authority
JP
Japan
Prior art keywords
spherical
film
electrode
substrate
spherical substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4674179A
Other languages
Japanese (ja)
Inventor
Ikuo Iwai
Hisao Yoshiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iwasaki Denki KK
Original Assignee
Iwasaki Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iwasaki Denki KK filed Critical Iwasaki Denki KK
Priority to JP4674179A priority Critical patent/JPS55141565A/en
Publication of JPS55141565A publication Critical patent/JPS55141565A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/046Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a film of uniform thickness very easily on the inner surface of a spherical substrate in sputtering a film of a dielectric material on the inner surface of a spherical substrate, by arranging a spherical high frequency electrode applied with the material of the film, in the spherical substrate, then by producing glow discharge between the spherical electrode and an earth electrode. CONSTITUTION:A spherical substrate 9, which is similar in shape to a globe of lighting apparatus, is arranged in a vacuum vessel, then the vessl is evacuated and an atmosphere gas is introduced at a constant pressure. A spherical, high frequency electrode 11 applied with a film material 13 is arranged in the center of the spherical substrate 9, and glow discharge is produced between the spherical electrode 11 and a lower cylindrical each electrode 16, whereby the film material 13 painted on the electrode 11 is sputtered by the glow discharge and adheres to the inner surface of the spherical substrate 9 to form a film. Because the high frequency electrode 11 is spherical, the distance from the inner surface of the spherical substrate to the film material is equal at all points of the substrate, so that a film of uniform thickness is formed on the inner surface of the spherical substrate 1.
JP4674179A 1979-04-18 1979-04-18 Sputtering apparatus Pending JPS55141565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4674179A JPS55141565A (en) 1979-04-18 1979-04-18 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4674179A JPS55141565A (en) 1979-04-18 1979-04-18 Sputtering apparatus

Publications (1)

Publication Number Publication Date
JPS55141565A true JPS55141565A (en) 1980-11-05

Family

ID=12755747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4674179A Pending JPS55141565A (en) 1979-04-18 1979-04-18 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS55141565A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262323A2 (en) * 1986-07-26 1988-04-06 Andreas Biedermann Process for the interior coating of electrically non-conducting hollow bodies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262323A2 (en) * 1986-07-26 1988-04-06 Andreas Biedermann Process for the interior coating of electrically non-conducting hollow bodies
EP0262323A3 (en) * 1986-07-26 1989-07-26 Andreas Biedermann Process for the interior coating of electrically non-conducting hollow bodies

Similar Documents

Publication Publication Date Title
IE41938L (en) Depositing by reactive sputtering
JPS575418A (en) Cavity type surface elastic wave resonator
GB1405489A (en) Sputtering apparatus
JPS55141565A (en) Sputtering apparatus
JPS57167133A (en) Production for magnetic recording medium
JPS5638729A (en) Manufacture of gas discharge panel
JPS55101853A (en) Method of fabricating comparison electrode with fet
EP0921556A3 (en) Thin film forming apparatus
JPS565974A (en) Film forming method
JPS5562160A (en) Forming method for film by glow discharge
JPS5386687A (en) Preparation of nb3ge crystal
JPS56130466A (en) Film forming method
JPS52122284A (en) Sputtering device having bias electrode
JPS5531139A (en) Ion-treating apparatus
JPS5667925A (en) Plasma etching method
JPS5745339A (en) Production of deposited film
JPS565972A (en) Film forming method
JPS52122283A (en) Sputtering device having bias mechanism
JPS57117240A (en) High-frequency sputtering etching device
JPS5528252A (en) Method of manufacturing control electrode of flat plate- like picture display unit
JPS5399082A (en) High frequency sputtering apparatus
JPS5671831A (en) Manufacture for magnetic recording medium
JPS5478691A (en) Crystal vibrator
JPS5763675A (en) Wristwatch case with diamond coating and its production
JPS56138916A (en) Formation of amorphous thin film