JPS5513939A - Photoelectronic conversion semiconductor device - Google Patents
Photoelectronic conversion semiconductor deviceInfo
- Publication number
- JPS5513939A JPS5513939A JP8686878A JP8686878A JPS5513939A JP S5513939 A JPS5513939 A JP S5513939A JP 8686878 A JP8686878 A JP 8686878A JP 8686878 A JP8686878 A JP 8686878A JP S5513939 A JPS5513939 A JP S5513939A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- continuation
- metalic
- film
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE: To obtain a device with a good photoelectronic conversion efficiency at a low cost and promote its mass production by achieving the continuation of the energy band width of the PN junction on a non-single crystal semiconductor layer grown on a substrate by a CVD method.
CONSTITUTION: A insulated carrier of Al2O3 having the metalic film of W and others placed on the surface or a metalic conductor of Ti and others is used for a substrate 21 and a non-single semiconductor layer 22 is formed by a CVD method or a glow discharge on the substrate 21. In this case, Si or Ge is used as a reactive gas to form the layer 22, the impurity for defining either the P-type composition or the N-type one is composed of Al, As and others and Si, C, N2, O2, In, Sb and others are used to establish the continuation of the energy band width. Successively, a reflection preventing film 23 is formed over the full surface, a plurality of opposite electrodes 25 are attached, and the light 27 is irradiated to a SiO2 protective film 23 covered over the full surface. By such a method, a recombination center is reduced to keep the life time of a carrier for the non-single crystal semiconductor longer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8686878A JPS5513939A (en) | 1978-07-17 | 1978-07-17 | Photoelectronic conversion semiconductor device |
| US06/058,077 US4239554A (en) | 1978-07-17 | 1979-07-16 | Semiconductor photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8686878A JPS5513939A (en) | 1978-07-17 | 1978-07-17 | Photoelectronic conversion semiconductor device |
Related Child Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56188823A Division JPS57141979A (en) | 1981-11-25 | 1981-11-25 | Photoelectric transducing semiconductor device |
| JP56188819A Division JPS57141975A (en) | 1981-11-25 | 1981-11-25 | Photoelectric transducing semiconductor device |
| JP56188821A Division JPS57141977A (en) | 1981-11-25 | 1981-11-25 | Photoelectric transducing semiconductor device |
| JP56188820A Division JPS57141976A (en) | 1981-11-25 | 1981-11-25 | Photoelectric transducing semiconductor device |
| JP56188822A Division JPS57141978A (en) | 1981-11-25 | 1981-11-25 | Photoelectric transducing semiconductor device |
| JP57070145A Division JPS5840871A (en) | 1982-04-26 | 1982-04-26 | Optoelectric converting semiconductor device |
| JP57070143A Division JPS5840868A (en) | 1982-04-26 | 1982-04-26 | Manufacture of optoelectric converting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5513939A true JPS5513939A (en) | 1980-01-31 |
Family
ID=13898789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8686878A Pending JPS5513939A (en) | 1978-07-17 | 1978-07-17 | Photoelectronic conversion semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513939A (en) |
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57119362A (en) * | 1981-01-17 | 1982-07-24 | Canon Inc | Photoconductive member |
| JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
| JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
| JPS57141975A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| JPS57141976A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| JPS57141979A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| DE3135411A1 (en) | 1980-09-09 | 1982-09-23 | Energy Conversion Devices Inc | METHOD FOR PRODUCING A PHOTO-SENSITIVE AMORPHOUS ALLOY |
| JPS57177152A (en) * | 1981-04-24 | 1982-10-30 | Canon Inc | Electrophotographic image forming material |
| JPS5867073A (en) * | 1981-10-19 | 1983-04-21 | Agency Of Ind Science & Technol | Solar battery |
| JPS5891684A (en) * | 1981-11-26 | 1983-05-31 | Canon Inc | Photoconductive member |
| JPS5891683A (en) * | 1981-11-26 | 1983-05-31 | Canon Inc | Photoconductive member |
| JPS5893384A (en) * | 1981-11-30 | 1983-06-03 | Canon Inc | Photoconductive member |
| JPS58115854A (en) * | 1981-12-28 | 1983-07-09 | Seiko Epson Corp | Manufacture of image sensor |
| JPS5986053A (en) * | 1982-11-09 | 1984-05-18 | Seiko Epson Corp | Photosensitive drum |
| JPS61500997A (en) * | 1984-04-27 | 1986-05-15 | ヒユ−ズ・エアクラフト・カンパニ− | Solar panels and their manufacturing method |
| JPH02296376A (en) * | 1989-05-10 | 1990-12-06 | Agency Of Ind Science & Technol | Method of operating photoelectric conversion element |
| JPH05257311A (en) * | 1992-08-28 | 1993-10-08 | Seiko Epson Corp | Photosensitive drum |
| US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| US5591987A (en) * | 1980-03-03 | 1997-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor MIS field effect transistor with semi-amorphous semiconductor material |
| US5821597A (en) * | 1992-09-11 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
| US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
| US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
| US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
| US6355941B1 (en) * | 1980-06-30 | 2002-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US6720576B1 (en) | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
| USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| JP2013533645A (en) * | 2010-08-09 | 2013-08-22 | ザ・ボーイング・カンパニー | Heterojunction solar cell |
-
1978
- 1978-07-17 JP JP8686878A patent/JPS5513939A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| IEEE TRANASACTIONS ON ELECTRON DEVICES=1977 * |
| IEEE TRANSACTIONS ON ELECTRON DEVICES=1977 * |
Cited By (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591987A (en) * | 1980-03-03 | 1997-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor MIS field effect transistor with semi-amorphous semiconductor material |
| US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| US6355941B1 (en) * | 1980-06-30 | 2002-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE3135411A1 (en) | 1980-09-09 | 1982-09-23 | Energy Conversion Devices Inc | METHOD FOR PRODUCING A PHOTO-SENSITIVE AMORPHOUS ALLOY |
| JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
| JPS628783B2 (en) * | 1981-01-16 | 1987-02-24 | Canon Kk | |
| JPS57119362A (en) * | 1981-01-17 | 1982-07-24 | Canon Inc | Photoconductive member |
| JPS628784B2 (en) * | 1981-01-17 | 1987-02-24 | Canon Kk | |
| JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
| JPH0544198B2 (en) * | 1981-02-17 | 1993-07-05 | Kanegafuchi Chemical Ind | |
| JPS57177152A (en) * | 1981-04-24 | 1982-10-30 | Canon Inc | Electrophotographic image forming material |
| JPS628786B2 (en) * | 1981-04-24 | 1987-02-24 | Canon Kk | |
| JPS5867073A (en) * | 1981-10-19 | 1983-04-21 | Agency Of Ind Science & Technol | Solar battery |
| JPS6330789B2 (en) * | 1981-10-19 | 1988-06-21 | Kogyo Gijutsuin | |
| JPS57141975A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| JPS57141976A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| JPS57141979A (en) * | 1981-11-25 | 1982-09-02 | Shunpei Yamazaki | Photoelectric transducing semiconductor device |
| JPS5891683A (en) * | 1981-11-26 | 1983-05-31 | Canon Inc | Photoconductive member |
| JPH0376034B2 (en) * | 1981-11-26 | 1991-12-04 | Canon Kk | |
| JPS5891684A (en) * | 1981-11-26 | 1983-05-31 | Canon Inc | Photoconductive member |
| JPS6316916B2 (en) * | 1981-11-30 | 1988-04-11 | Canon Kk | |
| JPS5893384A (en) * | 1981-11-30 | 1983-06-03 | Canon Inc | Photoconductive member |
| JPS6257261B2 (en) * | 1981-12-28 | 1987-11-30 | Seiko Epson Corp | |
| JPS58115854A (en) * | 1981-12-28 | 1983-07-09 | Seiko Epson Corp | Manufacture of image sensor |
| US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| JPS5986053A (en) * | 1982-11-09 | 1984-05-18 | Seiko Epson Corp | Photosensitive drum |
| US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
| US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
| US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
| JPS61500997A (en) * | 1984-04-27 | 1986-05-15 | ヒユ−ズ・エアクラフト・カンパニ− | Solar panels and their manufacturing method |
| US6680486B1 (en) | 1984-05-18 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| US6635520B1 (en) | 1984-05-18 | 2003-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
| US6660574B1 (en) | 1984-05-18 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a semiconductor device including recombination center neutralizer |
| US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| US6734499B1 (en) | 1984-05-18 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
| US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| JPH02296376A (en) * | 1989-05-10 | 1990-12-06 | Agency Of Ind Science & Technol | Method of operating photoelectric conversion element |
| JPH05257311A (en) * | 1992-08-28 | 1993-10-08 | Seiko Epson Corp | Photosensitive drum |
| US5821597A (en) * | 1992-09-11 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US6720576B1 (en) | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
| US7095090B2 (en) | 1992-09-11 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| JP2013533645A (en) * | 2010-08-09 | 2013-08-22 | ザ・ボーイング・カンパニー | Heterojunction solar cell |
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