JPS55136200A - Manufacture of gadolinium garnet - Google Patents

Manufacture of gadolinium garnet

Info

Publication number: JPS55136200A
Authority: JP; Japan
Prior art keywords: manufacture; gadolinium garnet; garnet; gadolinium
Prior art date: 1979-04-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP4208380A

Other languages

Japanese (ja)

Other versions

JPS5918360B2 (en

Inventor

Benson Hatsuseru Jiyunia Jiyon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Union Carbide Corp

Original Assignee

Union Carbide Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-04-12

Filing date

1980-04-02

Publication date

1980-10-23

1980-04-02 Application filed by Union Carbide Corp filed Critical Union Carbide Corp

1980-10-23 Publication of JPS55136200A publication Critical patent/JPS55136200A/en

1984-04-26 Publication of JPS5918360B2 publication Critical patent/JPS5918360B2/en

Status Expired legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Soft Magnetic Materials (AREA)

JP55042083A 1979-04-12 1980-04-02 Method for producing gadolinium garnet Expired JPS5918360B2 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US2921679A	1979-04-12	1979-04-12
US29216		2001-12-28

Publications (2)

Publication Number	Publication Date
JPS55136200A true JPS55136200A (en)	1980-10-23
JPS5918360B2 JPS5918360B2 (en)	1984-04-26

Family

ID=21847874

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP55042083A Expired JPS5918360B2 (en)	1979-04-12	1980-04-02	Method for producing gadolinium garnet

Country Status (7)

Country	Link
JP (1)	JPS5918360B2 (en)
CA (1)	CA1171341A (en)
CH (1)	CH646402A5 (en)
DE (1)	DE3013045C2 (en)
FR (1)	FR2453916A1 (en)
GB (1)	GB2047113B (en)
NL (1)	NL8002144A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS605094A (en) *	1983-06-13	1985-01-11	Shin Etsu Chem Co Ltd	Production of gallium garnet single crystal
JPS6051694A (en) *	1983-07-07	1985-03-23	クリスマテツク・エス・ア−	Manufacture of bismuth germanate single crystal with high scintillation response
JP2015515441A (en) *	2012-04-24	2015-05-28	フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン	Method and apparatus for growing indium oxide (In2O3) single crystal and indium oxide (In2O3)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6936900B1 (en)	2000-05-04	2005-08-30	Osemi, Inc.	Integrated transistor devices
US6451711B1 (en) *	2000-05-04	2002-09-17	Osemi, Incorporated	Epitaxial wafer apparatus
US7187045B2 (en)	2002-07-16	2007-03-06	Osemi, Inc.	Junction field effect metal oxide compound semiconductor integrated transistor devices
CN104313693B (en) *	2014-09-19	2017-01-18	北京雷生强式科技有限责任公司	Yttrium aluminum garnet laser crystal doped growth device, crystal growth furnace and preparation method thereof
WO2021031139A1 (en) *	2019-08-21	2021-02-25	眉山博雅新材料有限公司	Multi-component garnet-structured scintillation crystal growth method and equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3723599A (en) *	1971-08-18	1973-03-27	Bell Telephone Labor Inc	Technique for growth of single crystal gallium garnet
CA1080589A (en) *	1976-06-24	1980-07-01	Union Carbide Corporation	Method for producing single crystal gadolinium gallium

1980
- 1980-03-28 GB GB8010437A patent/GB2047113B/en not_active Expired
- 1980-04-02 JP JP55042083A patent/JPS5918360B2/en not_active Expired
- 1980-04-03 DE DE3013045A patent/DE3013045C2/en not_active Expired
- 1980-04-09 CA CA000349487A patent/CA1171341A/en not_active Expired
- 1980-04-11 CH CH282380A patent/CH646402A5/en not_active IP Right Cessation
- 1980-04-11 NL NL8002144A patent/NL8002144A/en not_active Application Discontinuation
- 1980-04-11 FR FR8008145A patent/FR2453916A1/en not_active Withdrawn

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS605094A (en) *	1983-06-13	1985-01-11	Shin Etsu Chem Co Ltd	Production of gallium garnet single crystal
JPH0114200B2 (en) *	1983-06-13	1989-03-09	Shinetsu Chem Ind Co
JPS6051694A (en) *	1983-07-07	1985-03-23	クリスマテツク・エス・ア−	Manufacture of bismuth germanate single crystal with high scintillation response
JP2015515441A (en) *	2012-04-24	2015-05-28	フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン	Method and apparatus for growing indium oxide (In2O3) single crystal and indium oxide (In2O3)

Also Published As

Publication number	Publication date
CA1171341A (en)	1984-07-24
JPS5918360B2 (en)	1984-04-26
NL8002144A (en)	1980-10-14
GB2047113B (en)	1983-08-03
FR2453916A1 (en)	1980-11-07
DE3013045C2 (en)	1983-11-03
CH646402A5 (en)	1984-11-30
DE3013045A1 (en)	1980-10-16
GB2047113A (en)	1980-11-26

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